EL display device and electronic apparatus
First Claim
Patent Images
1. An EL display device having a pixel portion over a substrate, said pixel portion comprising:
- a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween.
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Abstract
An EL display device capable of clear, multi-gradation color display, and an electronic device having the EL display device, are provided. Gradation display is performed in accordance with a time division driver method which controls by the amount of time an EL element formed in a pixel emits light, and the amount of time it does not emit light. Influence due to dispersion in the characteristics of electric current TFTs is prevented.
279 Citations
18 Claims
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1. An EL display device having a pixel portion over a substrate, said pixel portion comprising:
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a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween. - View Dependent Claims (2, 3)
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4. An EL display device having a pixel portion, a source driver circuit and a gate driver circuit over a substrate, said pixel portion comprising:
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a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween. - View Dependent Claims (5, 6)
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7. An EL display device having a pixel portion over a substrate, said pixel portion comprising:
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a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween, wherein said switching TFT comprises any one of a p-channel TFT and a n-channel TFT, wherein said current control TFT comprises the p-channel TFT, and wherein a drain region of said current control TFT is electrically connected to an anode of an EL element. - View Dependent Claims (8, 9)
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10. An EL display device having a pixel portion, a source driver circuit and a gate driver circuit over a substrate, said pixel portion comprising:
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a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween, wherein said switching TFT comprises any one of a p-channel TFT and a n-channel TFT, wherein said current control TFT comprises the p-channel TFT, and wherein a drain region of said current control TFT is electrically connected to an anode of an EL element. - View Dependent Claims (11, 12)
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13. An EL display device having a pixel portion over a substrate, said pixel portion comprising:
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a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween, wherein said switching TFT comprises any one of a p-channel TFT and a n-channel TFT, wherein said current control TFT comprises the p-channel TFT, and wherein a drain region of said current control TFT is electrically connected to a cathode of an EL element. - View Dependent Claims (14, 15)
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16. An EL display device having a pixel portion, a source driver circuit and a gate driver circuit over a substrate, said pixel portion comprising:
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a switching TFT having a LDD region in contact with a channel region and not overlapping a gate electrode with a gate insulating film interposed therebetween; and
a current control TFT having the LDD region overlapping the gate electrode with the gate insulating film interposed therebetween, wherein said switching TFT comprises any one of a p-channel TFT and a n-channel TFT, wherein said current control TFT comprises the p-channel TFT, and wherein a drain region of said current control TFT is electrically connected to a cathode of an EL element. - View Dependent Claims (17, 18)
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Specification