Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement

• US 6,680,963 B2
• Filed: 07/24/2001
• Issued: 01/20/2004
• Est. Priority Date: 07/24/2001
• Status: Active Grant

• Current Assignee: LuxNet Corporation
• Original Assignee: Lux Net Corporation
• Inventors: Kuo, Hao-Chung, Hasnain, Ghulam, Kuo, Chihping, Shi, Zhiqing, Liao, Andrew Shuh-Huei, Trieu, Minh Ngoc
• Primary Examiner(s): DAVIE, JAMES W
• Application Number:
  US09/912,801
• Publication Number:
  US 20030021326A1
• Time in Patent Office: 910 Days
• Field of Search: 372/96, 372/46
• US Class Current: 372/96
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/2059 by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.

Claims

1. A current confinement element comprising:

a top layer comprising a top semiconducting material of a first conductivity type that is transparent to light; and

an aperture defining layer comprising an aperture region and a confinement region, said aperture region comprising an aperture semiconducting material of said first conductivity type that is transparent to light, said confinement region surrounding said aperture region and comprising a confinement semiconducting material of a second conductivity type, said aperture defining layer being in electrical contact with said top layer such that current will flow preferentially through said aperture region relative to said confinement region when a potential difference is applied between said top and said aperture defining layers.

2. The current confinement element of claim 1 wherein said current confinement semiconducting material comprises a semiconducting material of said first conductivity type that has been doped with sufficient impurities to convert said semiconducting material to said second conductivity type.

3. The current confinement element of claim 2 wherein said first conductivity type is p-type and wherein said impurities comprise an element chosen from the group consisting of Si, Ge, S, Sn, Te, and Se.

4. The current confinement element of claim 2 wherein said first conductivity type is n-type and wherein said impurities comprise an element chosen from the group consisting of C and Be.

5. A laser diode comprising:

a bottom mirror comprising an electrically conducting material;

a first conductive spacer situated above said bottom mirror;

a light emitting layer;

a second conductive spacer situated above said light emitting material;

a top mirror comprising a layer of a semiconducting material of a first conductivity type above said second conductive spacer, and

an aperture defining layer comprising an aperture region and a confinement region, said aperture region comprising an aperture semiconducting material of said first conductivity type, said confinement region surrounding said aperture region and comprising a confinement semiconducting material of a second conductivity type, wherein current flows preferentially through said aperture region relative to said confinement region when a potential difference is applied between said top and bottom mirrors.

6. The laser diode of claim 5 wherein said confinement semiconducting material comprises a semiconducting material of said first conductivity type that has been doped with sufficient impurities to convert said semiconducting material to said second conductivity type.

7. The laser diode of claim 6 wherein said first conductivity type is p-type and wherein said impurities comprise an element chosen from the group consisting of Si, Ge, S, Sn, Te, and Se.

8. The laser diode of claim 6 wherein said first conductivity type is n-type and wherein said impurities comprise an element chosen from the group consisting of C and Be.

9. The laser diode of claim 5 further comprising a top electrical contact for applying an electrical potential to said top mirror, said top electrical contact comprising a layer of electrically conducting material having a transparent, non-electrically conducting region therein, said electrically conducting material being located such that said electrically conducting material does not overlay said aperture region.

10. The laser diode of claim 5 wherein said top mirror comprises a plurality of mirror layers of materials in which adjacent layers have different indexes of refraction and wherein said aperture defining layer comprises one of said mirror layers.

11. The laser diode of claim 10 wherein said aperture defining layer is located within a distance equal to 20 mirror layers of said light emitting layer.

12. The laser diode of claim 11 wherein said confinement region comprises a region in which the reflectivity of said top mirror is reduced compared to the reflectivity of said top mirror in said aperture region.

13. The laser diode of claim 12 wherein said confinement region comprises an element chosen from the group consisting of Cr, Ti, and Fe.