Stress controlled dielectric integrated circuit fabrication

• US 6,682,981 B2
• Filed: 02/05/2001
• Issued: 01/27/2004
• Est. Priority Date: 04/08/1992
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: ELM TECHNOLOGY CORPORATION
• Inventors: Leedy, Glenn Joseph
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): Rao, Shrinivas H
• Application Number:
  US09/775,597
• Publication Number:
  US 20030057513A1
• Time in Patent Office: 1,086 Days
• Field of Search: 257/578, 257/586, 257/619, 257/621, 148/DIG.121, 148/DIG.135, 148/DIG.151, 148/DIG.157, 148/DIG.40, 148/DIG.51, 148/DIG.55, 438/342, 438/343, 438/459, 438/977, 438/113, 438/462
• US Class Current: 438/342
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/136281 having a transmissive semiconductor substrate
• CPC Class Codes: G03F 7/70658 Electrical testing
• CPC Class Codes: G11C 29/006 at wafer scale level, i.e. wafer scale integration [WSI]
• CPC Class Codes: H01L 21/762 Dielectric regions , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76289 Lateral isolation by air gap
• CPC Class Codes: H01L 21/764 Air gaps H01L21/76264 takes precedence
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13009 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/80001 by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 23/538 the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates H05K takes precedence; manufacture or treatment H01L21/4846 ; mountings per se H01L23/12; materials H01L23/49866
• CPC Class Codes: H01L 23/5381 Crossover interconnections, e.g. bridge stepovers
• CPC Class Codes: H01L 23/5383 Multilayer substrates H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 23/5387 : Flexible insulating substrates H01L23/5388 takes precedence
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0207 : Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: Y10S 148/135 : Removal of substrate
• CPC Class Codes: Y10S 438/928 : Front and rear surface processing
• CPC Class Codes: Y10S 438/938 : Lattice strain control or utilization
• CPC Class Codes: Y10S 438/942 : Masking
• CPC Class Codes: Y10S 438/967 : Semiconductor on specified insulator
• CPC Class Codes: Y10S 438/977 : Thinning or removal of substrate
• CPC Class Codes: Y10T 29/49128 : Assembling formed circuit to base
• CPC Class Codes: Y10T 29/49162 : by using wire as conductive path
• CPC Class Codes: Y10T 29/49165 : by forming conductive walled aperture in base
• CPC Class Codes: Y10T 29/49171 : with encapsulating
• CPC Class Codes: Y10T 29/4921 : with bonding

Abstract

General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

Claims

1. A method of making an integrated circuit comprising:

forming on a semiconductor substrate circuitry including multiple integrated circuits having active devices; and

forming a stress-controlled dielectric membrane adjacent said circuitry;

wherein the integrated circuit is able to have a major portion of the semiconductor substrate removed throughout a full extent thereof while retaining its structural integrity.

2. The method of claim 1, wherein the integrated circuit is able to be thinned to about 50 microns or less while retaining its structural integrity.

3. The method of claim 1, wherein said semiconductor substrate is a semiconductor wafer.

4. The method of claim 1, further comprising removing a major portion of the semiconductor substrate.

5. The method of claim 4, wherein the major portion of the semiconductor substrate is removed prior to forming said circuitry.

6. The method of claim 4, wherein the major portion of the semiconductor substrate is removed after forming said circuitry.

7. The method of claim 1, wherein the integrated circuit is caused to have a thickness of about 50 microns or less.

8. The method of claim 1, wherein the stress-controlled dielectric membrane is caused to have a stress of about 8×

10⁸ dynes/cm² or less.

9. The method of claim 8, wherein said stress is tensile.

10. The method of claim 1, wherein the stress-controlled dielectric membrane comprises at least one or more stress-controlled dielectric layers.

11. The method of claim 1, wherein the major portion of the semiconductor substrate is removed prior to forming said circuitry.

12. The method of claim 1, wherein the major portion of the semiconductor substrate is removed after forming said circuitry.

13. The method of claim 1, comprising forming the stress-controlled dielectric membrane by deposition of one or more stress-controlled dielectric films.

14. The method of claim 13, comprising depositing at least some of the stress-controlled dielectric films using multiple RF energy sources.

15. A method of making an integrated circuit comprising:

forming on a semiconductor substrate circuitry including multiple integrated circuits having active devices; and

forming a stress-controlled dielectric layer adjacent said circuitry;

wherein the integrated circuit is able to have a major portion of the semiconductor substrate removed throughout a full extent thereof while retaining its structural integrity.

16. The method of claim 15, wherein the integrated circuit is able to be thinned to about 50 microns or less while retaining its structural integrity.

17. The method of claim 15, comprising forming the stress-controlled dielectric layer by deposition of one or more stress-controlled dielectric films.

18. The method of claim 17, comprising depositing at least some of the stress-controlled dielectric films using multiple RF energy sources.

19. The method of claim 15, wherein said semiconductor substrate is a semiconductor wafer.

20. The method of claim 15, further comprising removing a major portion of the semiconductor substrate.

21. The method of claim 20, wherein the major portion of the semiconductor substrate is removed prior to forming said circuitry.

22. The method of claim 20, wherein the major portion of the semiconductor substrate is removed after forming said circuitry.

23. The method of claim 15, wherein the integrated circuit is caused to have a thickness of about 50 microns or less.

24. The method of claim 15, wherein the stress-controlled dielectric layer is caused to have a stress of about 8×

10⁸ dynes/cm² or less.

25. The method of claim 24, wherein said stress is tensile.

26. A method of making an integrated circuit comprising:

forming on a semiconductor substrate circuit including multiple integrated circuits having active devices; and

forming a stress-controlled dielectric layer adjacent said circuitry;

removing a major portion of the semiconductor substrate throughout a full extent thereof without impairing the structural integrity of the integrated circuit.

27. The method of claim 26, wherein the major portion of the semiconductor substrate is removed prior to forming said circuitry.

28. The method of claim 26, wherein the major portion of the semiconductor substrate is removed after forming said circuitry.

29. The method of claim 26, comprising forming the stress-controlled dielectric layer by deposition of one or more stress-controlled dielectric films.

30. The method of claim 29, comprising depositing at least some of the stress-controlled dielectric films using multiple RF energy sources.

31. The method of claim 26, wherein said semiconductor substrate is a semiconductor wafer.

32. The method of claim 26, wherein the major portion of the semiconductor substrate is removed prior to forming said circuitry.

33. The method of claim 26, wherein the major portion of the semiconductor substrate is removed after forming said circuitry.

34. The method of claim 26, wherein the integrated circuit is caused to have a thickness of about 50 microns or less.

35. The method of claim 26, wherein the stress-controlled dielectric layer is caused to have a stress of about 8×

10⁸ dynes/cm² or less.

36. The method of claim 35, wherein said stress is tensile.

37. A method of making an integrated circuit comprising:

forming on a substrate circuitry including multiple integrated circuits having active devices; and

forming a stress-controlled dielectric membrane adjacent said circuitry;

wherein the integrated circuit is able to have a major portion of the substrate removed throughout a full extent thereof while retaining its structural integrity.

38. The method of claim 37, wherein the integrated circuit is able to be thinned to about 50 microns or less while retaining its structural integrity.

40. The method of claim 37, further comprising removing a major portion of the substrate.

41. The method of claim 40, wherein the major portion of the substrate is removed prior to forming said circuitry.

42. The method of claim 40, wherein the major portion of the substrate is removed after forming said circuitry.

43. The method of claim 37, wherein the integrated circuit is caused to have a thickness of about 50 microns or less.

44. The method of claim 37, wherein the stress-controlled dielectric membrane is caused to have a stress of about 8×

10⁸ dynes/cm² or less.

45. The method of claim 44, wherein said stress is tensile.

46. The method of claim 37, wherein the stress-controlled dielectric membrane comprises at least one or more stress-controlled dielectric layers.

47. The method of claim 37, wherein the major portion of the substrate is removed prior to forming said circuitry.

48. The method of claim 37, wherein the major portion of the substrate is removed after forming said circuitry.

49. The method of claim 37, comprising forming the stress-controlled dielectric membrane by deposition of one or more stress-controlled dielectric films.

50. The method of claim 49, comprising depositing at least some of the stress-controlled dielectric films using multiple RF energy sources.

39. The method of clam 37, wherein said substrate is a semiconductor wafer.

51. A method of making an integrated circuit comprising:

forming on a substrate circuitry including multiple integrated circuits having active devices; and

forming a stress-controlled dielectric layer adjacent said circuitry;

wherein the integrated circuit is able to have a major portion of the substrate removed throughout a full extent thereof while retaining its structural integrity.

52. The meted of claim 51, wherein the integrated circuit is able to be thinned to about 50 microns or less while retaining its structural integrity.

53. The method of claim 51, comprising forming the stress-controlled dielectric layer by deposition of one or more stress-controlled dielectric films.

54. The method of claim 53, comprising depositing at least some of the stress-controlled dielectric films using multiple RF energy sources.

55. The method of claim 51, wherein said substrate is a semiconductor wafer.

56. The method of claim 51, further comprising removing a major portion of the substrate.

57. The method of claim 56, wherein the major portion of the substrate is removed prior to forming said circuitry.

58. The method of claim 56, wherein the major portion of the substrate is removed after forming said circuitry.

59. The method of claim 51, wherein the integrated circuit is caused to have a thickness of about 50 microns or less.

60. The method of claim 51, wherein the stress-controlled dielectric layer is caused to have a stress of about 8×

10⁸ dynes/cm² or less.

61. The method of claim 60, wherein said stress is tensile.

62. A method of making an integrated circuit comprising:

forming on a substrate circuitry including multiple integrated circuits having active devices; and

forming a stress-controlled dielectric layer adjacent said circuitry;

removing a major portion of the substrate throughout a full extent thereof without impairing the structural integrity of the integrated circuit.

63. The method of claim 62, wherein the major portion of the substrate is removed prior to forming said circuitry.

64. The method of claim 62, wherein the major portion of the substrate is removed after forming said circuitry.

65. The method of claim 62, comprising forming the stress-controlled dielectric layer by deposition of one or more stress-controlled dielectric films.

66. The method of claim 65, comprising depositing at least some of the stress-controlled dielectric films using multiple RF energy sources.

67. The method of claim 62, wherein said substrate is a semiconductor wafer.

68. The method of claim 62, wherein the integrated circuit is caused to have a thickness of about 50 microns or less.

69. The method of claim 62, wherein the stress-controlled dielectric layer is caused to have a stress of about 8×

10⁸ dynes/cm² or less.

70. The method of claim 69, wherein said stress is tensile.