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Flash EEprom system

  • US 6,684,345 B2
  • Filed: 12/26/2002
  • Issued: 01/27/2004
  • Est. Priority Date: 04/13/1989
  • Status: Expired due to Fees
First Claim
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1. A memory system, comprising:

  • non-volatile memory cells that are erasable and re-programmable, the memory cells being organized into units of memory cells that are erasable together, a generator of an address of memory cells that is responsive to an address received by the memory system, a data interface that passes data received by the memory system to the array for programming and that outputs data from the memory system that are read from the array, a command sequencer, the command sequencer being responsive to a read command received by the memory system to cause data to be read from a plurality of memory cells of the array in parallel by stepping through a predefined sequence of data read operations that include passing data read from the array and out of the memory system through the data interface, and the command sequencer being responsive to a program command received by the memory system to cause data received by the memory system through the data interface to be programmed in parallel into multiple memory cells of the array by stepping through a predefined sequence of data programming operations including alternately programming and verifying a programmed state of the multiple memory cells.

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