Heterogeneous spacers for CPP GMR stacks

• US 6,686,068 B2
• Filed: 02/21/2001
• Issued: 02/03/2004
• Est. Priority Date: 02/21/2001
• Status: Expired due to Fees

• Current Assignee: HGST Netherlands B.V. (Western Digital Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Childress, Jeffrey Robinson, Gurney, Bruce Alvin, Carey, Matthew Joseph
• Primary Examiner(s): Kiliman, Leszek
• Application Number:
  US09/791,510
• Publication Number:
  US 20020114974A1
• Time in Patent Office: 1,077 Days
• Field of Search: 428/694, 428/694.TM, 428/694.TS, 428/692, 428/900, 360/113, 360/319, 360/324.1, 360/324
• US Class Current: 428/811.3
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H01F 10/3227 Exchange coupling via one or more magnetisable ultrathin or granular films
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: Y10S 428/90 Magnetic feature
• CPC Class Codes: Y10T 428/1107 Magnetoresistive
• CPC Class Codes: Y10T 428/1129 Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]

Abstract

A CPP magnetoresistive sensor with a spacer layer made of a heterogeneous material, which is composed of conductive grains within a highly resistive matrix, has a high resistance. The conductive grains are typically made of a conductive element or alloy that can operate as a GMR spacer material. The highly resistive matrix is typically made of a highly resistive or insulating element, alloy or compound that will hinder the flow of electrons. The sensing electrical current is passed through the conductive grains, which are typically made of the same material as GMR spacers, so the GMR is maintained even though the overall resistance is increased.

Claims

1. A current-perpendicular-to-plane (CPP) magnetoresistive sensor comprising:

a) at least two magnetic layers; and

b) at least one heterogeneous spacer layer disposed between the two magnetic layers, wherein the heterogeneous spacer layer is made of a heterogeneous material which is composed of conductive grains within a highly resistive matrix, and wherein the heterogeneous spacer layer substantially increases resistance of the CPP magnetoresistive sensor without reducing magnetoresistance thereof, the content of the conductive grains in the heterogeneous spacer layer being between about 0.1 volume % and about 50 volume %.

2. The CPP magnetoresistive sensor of claim 1, wherein the highly resistive matrix comprises NiO.

3. The CPP magnetoresistive sensor of claim 1, wherein the materials of the conductive grains and the highly resistive matrix have low miscibility.

4. The CPP magnetoresistive sensor of claim 1, wherein at least one of the magnetic layers has a magnetization pinned by an anti-ferromagnetic layer.

9. The CPP magnetoresistive sensor of claim 1, wherein the material of the conductive grains comprises Cu and the content of the conductive grains in the heterogeneous spacer layer is about 5 volume %.

10. The CPP magnetoresistive sensor of claim 1, wherein the material of the highly resistive matrix is an oxidized form of the material of the conductive grains.

11. The CPP magnetoresistive sensor of claim 1, wherein the conductive grains comprise metallic grains with sizes between about 20 Å

and about 80 Å

.

5. A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) read/write head comprising:

a) a first shield;

b) a first conductive gap adjacent to the first shield;

c) a second shield;

d) a second conductive gap adjacent to the second shield; and

e) a CPP magnetoresitive sensor disposed between the first and second conductive gaps;

wherein the CPP magnetoresistive sensor comprises;

i) at least two magnetic layers; and

ii) at least one heterogeneous spacer layer disposed between the two magnetic layers, wherein the heterogeneous spacer layer is made of a heterogeneous material which is composed of conductive grains within a highly resistive matrix, the content of the conductive grains in the heterogeneous spacer layer being between about 0.1 volume % and about 50 volume %.

6. The CPP GMR read/write head of claim 5, wherein the materials of the conductive grains and the highly resistive matrix are immiscible or have a very low miscibility.

7. A disk drive comprising:

a) a magnetic recording disk;

b) a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) read/write head including a CPP magnetoresistive sensor;

c) an actuator connected to the CPP GMR read/write head for moving the CPP GMR recording head across the magnetic recording disk;

d) a mechanism connected to the magnetic recording disk for moving the magnetic recording disk relative to the CPP GMR read/write head;

wherein the CPP magnetoresistive sensor comprises;

i) at least two magnetic layers; and

ii) at least one heterogeneous spacer layer disposed between the two magnetic layers, wherein the heterogeneous spacer layer is made of a heterogeneous material which is composed of conductive grains within a highly resistive matrix, the content of the conductive grains in the heterogeneous spacer layer being between about 0.1 volume % and about 50 volume %.

8. The disk drive of claim 7, wherein the materials of the conductive grains and the highly resistive matrix are immiscible or have a very low miscibility.

12. A current-perpendicular-to-plane (CPP) magnetoresistive sensor comprising:

a) at least two magnetic layers; and

b) at least one heterogeneous spacer layer disposed between the two magnetic layers, wherein the heterogeneous spacer layer comprises;

a layer of conductive material; and

a discontinuous layer of highly resistive material adjacent to the layer of conductive material, wherein holes in the discontinuous layer result in limited current paths for electrons.

13. The CPP magnetoresistive sensor, according to claim 12, wherein the conductive material comprises a material selected from the group of Cu, Au, and Ag.

14. The CPP magnetoresistive sensor, according to claim 12, wherein the highly resistive material comprises an oxide of a metal.

15. The CPP magnetoresistive sensor, according to claim 12, wherein the highly resistive material comprises SiO₂.