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Semiconductor device manufacturing method and apparatus

  • US 6,686,287 B1
  • Filed: 07/15/1999
  • Issued: 02/03/2004
  • Est. Priority Date: 07/15/1998
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming a first thin film, formed of non-single crystalline silicon, over an insulating substrate;

    forming a first resist pattern on the first thin film;

    patterning the first thin film by means of vapor phase chemical etching using the first resist pattern as a mask;

    forming a second thin film, formed of non-single crystalline silicon which is different from the first thin film, on the patterned first thin film;

    forming a second resist pattern on the second thin film; and

    patterning the second thin film by means of vapor-phase chemical etching using the second resist pattern as a mask;

    the patterning of the first thin film including detecting a luminescence intensity at a specific wavelength emitted from molecules or atoms which are contained mainly in the first and second thin films during the patterning, and determining the time of termination of the patterning on the basis of a change in the detected luminescence intensity, and the patterning of the second thin film including detecting a luminescence intensity at the specific wavelength during the patterning, and determining the time of termination of the patterning on the basis of a change in the detected luminescence intensity.

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