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Method for monitoring the rate of etching of a semiconductor

  • US 6,687,014 B2
  • Filed: 01/16/2002
  • Issued: 02/03/2004
  • Est. Priority Date: 01/16/2002
  • Status: Expired due to Term
First Claim
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1. A method of measuring the rate of etching of trenches on a substrate using interferometry comprising:

  • transmitting onto the substrate incident electromagnetic radiation having a wavelength above the wavelength at which the trenches act as waveguides for the radiation;

    collecting reflected electromagnetic radiation from the substrate;

    detecting a repetitive pattern of maximum intensities and minimum intensities of the reflected electromagnetic radiation during the etching; and

    determining the rate of etching based upon the wavelength of the incident electromagnetic radiation and the time period of the pattern.

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