Plasma enhanced pulsed layer deposition

• US 6,689,220 B1
• Filed: 11/22/2000
• Issued: 02/10/2004
• Est. Priority Date: 11/22/2000
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: Simplus Systems Corporation (Rennova Health, Inc.)
• Inventors: Nguyen, Tue
• Primary Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/721,162
• Time in Patent Office: 1,175 Days
• Field of Search: 118/723.I, 118/723.MW, 118/723.E, 118/695, 118/698, 118/697, 156/345.48, 156/345.41, 156/345.43, 156/345.47, 156/345.33, 156/345.24
• US Class Current: 118/695
• CPC Class Codes: C23C 16/45538 Plasma being used continuously during the ALD cycle
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: H01L 21/28562 Selective deposition

Abstract

A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.

Claims

1. A process system for depositing a highly controlled layered film on a workpiece, the process system comprising:

a process chamber;

a workpiece;

a plurality of first precursor sources coupled to the process chamber for providing a continous flow of at least one precursor therein;

an energy source coupled to the process chamber for generating a plasma;

a plasma adjusting system configured to repeat alternately the following sequence

to turn on the plasma for about one second or longer to excite the precursors from the first precursor sources to promote a plasma-enhanced reaction of the precursors at the workpiece surface, and

to turn off the plasma for about one second or longer to prevent plasma excitation of the precursors from the first precursor sources, whereby preventing a plasma-enhanced reaction of the precursors at the workpiece surface.

2. The process system of claim 1 wherein the energy source is selected from a group consisting of inductive coupled plasma (ICP) source, capacitance plasma source, microwave guide plasma source, electron cyclotron resonance (ECR) plasma source, magnetron plasma source, DC power plasma source.

3. The process system of claim 1 further includes a heater source to heat the workpiece to a process temperature.

4. The process system of claim 1 further includes a second precursor source for providing at least one precursor to the process chamber, the precursor from the second precursor source being provided only when the plasma is turned off.

5. The process system of claim 1 further includes a third precursor source for providing at least one precursor to the process chamber, the precursor from the third precursor source being provided only when the plasma is turned on.

6. The process system of claim 1 wherein the plasma-on power level is in the range of 15 to 6000 watts.

7. A process system for depositing a highly controlled layered film on a workpiece, the process system comprising:

a process chamber;

a workpiece;

a plurality of first precursor sources coupled to the process chamber for providing a pulsed flow of at least one precursor therein;

an energy source coupled to the process chamber for generating a plasma;

a plasma adjusting system configured to repeat alternately the following sequence

to turn on the plasma for about one second or longer to excite the precursors from the first precursor sources to promote a plasma-enhanced reaction of the precursors at the workpiece surface, and

to turn off the plasma for about one second or longer to prevent plasma excitation of the precursors from the first precursor sources, whereby preventing a plasma-enhanced reaction of the precursors at the workpiece surface;

whereby the pulsed flow of the precursors from the first precursor sources is substantially synchronized with the plasma adjusting system so that there is no precursor flow when the plasma is off and there is precursor flow when the plasma is on.

8. The process system of claim 7 wherein the energy source is selected from a group consisting of inductive coupled plasma (ICP) source, capacitance plasma source, microwave guide plasma source, electron cyclotron resonance (ECR) plasma source, magnetron plasma source, DC power plasma source.

9. The process system of claim 7 further includes a heater source to heat the workpiece to a process temperature.

10. The process system of claim 7 further includes a second precursor source for providing a continuous flow of at least one precursor to the process chamber.