Method of forming a high voltage power MOSFET having low on-resistance
First Claim
1. A method of forming a power MOSFET comprising the steps ofproviding a substrate of a first conductivity type;
- depositing an epitaxial layer on the substrate, said epitaxial layer having a first conductivity type;
forming first and second body regions in the epitaxial layer to define a drift region therebetween, said body regions having a second conductivity type;
forming first and second source regions of the first conductivity type in the first and second body regions, respectively; and
forming a plurality of trenches below said body regions in said drift region of the epitaxial layer;
filling said trenches with a material having a dopant of the second conductivity type, said trenches extending toward, but not into, the substrate from the first and second body regions; and
diffusing at least a portion of said dopant from said trenches into portions of the epitaxial layer adjacent the trenches.
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Abstract
A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift region between them. The body regions have a second conductivity type. First and second source regions of the first conductivity type are respectively located in the first and second body regions. A plurality of trenches are located below the body regions in the drift region of the epitaxial layer. The trenches, which extend toward the substrate from the first and second body regions, are filled with a material that includes a dopant of the second conductivity type. The dopant is diffused from the trenches into portions of the epitaxial layer adjacent the trenches.
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Citations
13 Claims
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1. A method of forming a power MOSFET comprising the steps of
providing a substrate of a first conductivity type; -
depositing an epitaxial layer on the substrate, said epitaxial layer having a first conductivity type;
forming first and second body regions in the epitaxial layer to define a drift region therebetween, said body regions having a second conductivity type;
forming first and second source regions of the first conductivity type in the first and second body regions, respectively; and
forming a plurality of trenches below said body regions in said drift region of the epitaxial layer;
filling said trenches with a material having a dopant of the second conductivity type, said trenches extending toward, but not into, the substrate from the first and second body regions; and
diffusing at least a portion of said dopant from said trenches into portions of the epitaxial layer adjacent the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a power MOSFET comprising the steps of
providing a substrate of a first conductivity type; -
depositing an epitaxial layer on the substrate, said epitaxial layer having a first conductivity type;
forming first and second body regions in the epitaxial layer to define a drift region therebetween, said body regions having a second conductivity type;
forming first and second source regions of the first conductivity type in the first and second body regions, respectively; and
forming a plurality of trenches in said drift region of the epitaxial layer;
filling said trenches with a material having a dopant of the second conductivity type, said trenches extending toward, but hot into, the substrate from the first and second body regions; and
diffusing at least a portion of said dopant from said trenches into portions of the epitaxial layer adjacent the trenches wherein said material filling the trench is a dielectric. - View Dependent Claims (12)
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13. A method of forming a power MOSFET comprising the steps of
providing a substrate of a first conductivity type; -
depositing an epitaxial layer on the substrate, said epitaxial layer having a first conductivity type;
forming first and second body regions in the epitaxial layer to define a drift region therebetween, said body regions having a second conductivity type;
forming first and second source regions of the first conductivity type in the first and second body regions, respectively; and
forming a plurality of trenches in said drift region of the epitaxial layer;
filling said trenches with a material having a dopant of the second conductivity type, said trenches extending toward, but not into, the substrate from the first and second body regions; and
diffusing at least a portion of said dopant from said trenches into portions of the epitaxial layer adjacent the trenches, wherein said material filling the trench includes polysilicon and a dielectric.
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Specification