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Method of forming a high voltage power MOSFET having low on-resistance

  • US 6,689,662 B2
  • Filed: 10/29/2001
  • Issued: 02/10/2004
  • Est. Priority Date: 06/03/1999
  • Status: Expired due to Term
First Claim
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1. A method of forming a power MOSFET comprising the steps ofproviding a substrate of a first conductivity type;

  • depositing an epitaxial layer on the substrate, said epitaxial layer having a first conductivity type;

    forming first and second body regions in the epitaxial layer to define a drift region therebetween, said body regions having a second conductivity type;

    forming first and second source regions of the first conductivity type in the first and second body regions, respectively; and

    forming a plurality of trenches below said body regions in said drift region of the epitaxial layer;

    filling said trenches with a material having a dopant of the second conductivity type, said trenches extending toward, but not into, the substrate from the first and second body regions; and

    diffusing at least a portion of said dopant from said trenches into portions of the epitaxial layer adjacent the trenches.

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