Semiconductor device manufacturing method of forming an etching stopper film on a diffusion prevention film at a higher temperature

• US 6,689,690 B2
• Filed: 01/28/2002
• Issued: 02/10/2004
• Est. Priority Date: 07/04/2001
• Status: Expired due to Fees

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Ikeda, Masanobu
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): ROCCHEGIANI, RENZO
• Application Number:
  US10/055,880
• Publication Number:
  US 20030017698A1
• Time in Patent Office: 743 Days
• Field of Search: 438/687, 438/758, 438/761, 438/763, 438/786, 438/788, 438/789, 438/790, 438/791, 438/792, 438/793, 438/795, 438/902
• US Class Current: 438/687
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence

Abstract

A method of manufacturing a semiconductor device is provided. The method including the steps of forming an insulating interlayer film on a substrate, forming a Cu interconnection pattern in the insulating interlayer film, forming a first insulating film on the insulating interlayer film at a first temperature lower than 400° C. in a nonoxide situation so that the first insulating film covers the Cu interconnection pattern, and forming a second insulating film on the first insulating film at a second temperature higher than the first temperature.

Claims

1. A method of manufacturing a semiconductor device, the method comprising the steps of:

forming an insulating interlayer film on a substrate;

forming a Cu interconnection pattern in said insulating interlayer film;

forming a first insulating film on said insulating interlayer film at a first temperature lower than 400°

C. in a nonoxide situation so that said first insulating film covers said Cu interconnection pattern; and

forming a second insulating film of a same material as said first insulating film on said first insulating film at a second temperature higher than said first temperature.

2. The method as claimed in claim 1, further comprising the temperature-decreasing step of decrease a substrate temperature from said first temperature to a room temperature, and the temperature-increasing step of increase the substrate temperature from said room temperature to said second temperature, after said step of forming said first insulating film and before said step of forming said second insulating film.

3. The method as claimed in claim 2, wherein said step of forming said first insulating film, said temperature-decreasing step, said temperature-increasing step and said step of forming said second insulating film are performed in succession in a same depositing device.

4. The method as claimed in claim 1, wherein said first insulating film and said second insulating film are SiN films, said step of forming said first insulating film is performed by setting said first temperature within a range from 300 to 350°

C., and said step of forming said second insulating film is performed by setting said second temperature within a range from 350 to ,400°

C.

5. The method as claimed in claim 4, wherein said step of forming said first insulating film and said step of forming said second insulating film are performed by a plasma CVD method in a mixed gas plasma of a silane gas, an ammonia gas and a nitrogen gas.

6. The method as claimed in claim 1, wherein said first insulating film and said second insulating film are SiC films, said step of forming said first insulating film is performed by setting said first temperature within a range from 300 to 350°

C., and said step of forming said second insulating film is performed by setting said second temperature within a range from 350 to 400°

C.

7. The method as claimed in claim 6, wherein said step of forming said first insulating film and said step of forming said second insulating film are performed by a plasma CVD method in a mixed gas plasma of a methylsilane gas, an ammonia gas and a nitrogen gas.

8. A method of manufacturing a semiconductor device, the method comprising the steps of:

forming an insulating interlayer film on a substrate;

forming a Cu interconnection pattern in said insulating interlayer film;

forming a first insulating film on said insulating interlayer film at a first temperature lower than 400°

C. in a nonoxide situation so that said first insulating film covers said Cu interconnection pattern;

forming a second insulating film on said first insulating film at a second temperature higher than said first temperature; and

further comprising the temperature-decreasing step of decrease a substrate temperature from said first temperature to a room temperature, and the temperature-increasing step of increase the substrate temperature from said room temperature to said second temperature, after said step of forming said first insulating film and before said step of forming said second insulating film.

9. The method as claimed in claim 8, wherein said step of forming said first insulating film, said temperature-decreasing step, said temperature-increasing step and said step of forming said second insulating film are performed in succession in a same depositing device.

10. A method of manufacturing a semiconductor device, the method comprising the steps of:

forming an insulating interlayer film on a substrate;

forming a Cu interconnection pattern in said insulating interlayer film;

forming a first insulating film on said insulating interlayer film at a first temperature lower than 400°

C. in a nonoxide situation so that said first insulating film covers said Cu interconnection pattern; and

forming a second insulating film on said first insulating film at a second temperature higher than said first temperature;

wherein said first insulating film and said second insulating film are SiN films, said step of forming said first insulating film is performed by setting said first temperature within a range from 300 to 350°

C., and said step of forming said second insulating film is performed by setting said second temperature within a range from 350 to 400°

C.

11. The method as claimed in claim 10, wherein said step of forming said first insulating film and said step of forming said second insulating film are performed by a plasma CVD method in a mixed gas plasma of a silane gas, an ammonia gas and a nitrogen gas.

12. A method of manufacturing a semiconductor device, the method comprising the steps of:

forming an insulating interlayer film on a substrate;

forming a Cu interconnection pattern in said insulating interlayer film;

forming a first insulating film on said insulating interlayer film at a first temperature lower than 400°

C. in a nonoxide situation so that said first insulating film covers said Cu interconnection pattern; and

forming a second insulating film on said first insulating film at a second temperature higher than said first temperature;

wherein said first insulating film and said second insulating film are SiC films, said step of forming said first insulating film is performed by setting said first temperature within a range from 300 to 350°

C., and said step of forming said second insulating film is performed by setting said second temperature within a range from 350 to 400°

C.

13. The method as claimed in claim 12, wherein said step of forming said first insulating film and said step of forming said second insulating film are performed by a plasma CVD method in a mixed gas plasma of a methylsilane gas, an ammonia gas and a nitrogen gas.