Semiconductor device and method of manufacturing the same
First Claim
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1. A semiconductor device comprising:
- at least a thin film transistor formed on an insulating film;
a first interlayer insulating film covering the thin film transistor;
a first transparent conductive film formed on the first interlayer insulating film;
a capacitance insulating film formed on the first transparent conductive film;
an opening portion formed by patterning the first transparent conductive film and the capacitance insulating film;
a second interlayer insulating film covering the opening portion and overlapping a portion of the first transparent conductive film and the capacitance insulating film;
a contact hole formed in the first interlayer insulating film and the second interlayer insulating film to reach the thin film transistor;
a second transparent conductive film formed on the capacitance insulating film and being electrically connected to the thin film transistor, wherein a capacitor is formed between the first and second transparent conductive films with the capacitance insulating film interposed therebetween, wherein the opening portion has a larger diameter than the contact hole.
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Abstract
An electro-optical device including an auxiliary capacitance using a pair of transparent conductive films is improved to provide a semiconductor device with high quality. A first transparent conductive film and a capacitance insulating film are formed into a laminate on a leveling film, and an opening portion is formed. An insulating film is formed thereon, and a second transparent conductive film is patterned to form a pixel electrode. At this time, the auxiliary capacitance made of a structure in which the capacitance insulating film is sandwiched between the first transparent conductive film and the pixel electrode is formed.
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Citations
32 Claims
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1. A semiconductor device comprising:
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at least a thin film transistor formed on an insulating film;
a first interlayer insulating film covering the thin film transistor;
a first transparent conductive film formed on the first interlayer insulating film;
a capacitance insulating film formed on the first transparent conductive film;
an opening portion formed by patterning the first transparent conductive film and the capacitance insulating film;
a second interlayer insulating film covering the opening portion and overlapping a portion of the first transparent conductive film and the capacitance insulating film;
a contact hole formed in the first interlayer insulating film and the second interlayer insulating film to reach the thin film transistor;
a second transparent conductive film formed on the capacitance insulating film and being electrically connected to the thin film transistor, wherein a capacitor is formed between the first and second transparent conductive films with the capacitance insulating film interposed therebetween, wherein the opening portion has a larger diameter than the contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 13)
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9. A semiconductor device comprising:
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at least a thin film transistor formed on an insulating surface;
a first interlayer insulating film covering the thin film transistor;
a first transparent conductive film formed on the first interlayer insulating film;
a capacitance insulating film formed on the first transparent conductive film;
an opening portion formed in the first transparent conductive film and the capacitance insulating film;
a second interlayer insulating film covering the opening portion and overlapping a portion of the first transparent conductive film and the capacitance insulating film;
a contact hole formed in the first interlayer insulating film and the second interlayer insulating film to reach the thin film transistor;
a second transparent conductive film formed on the capacitance insulating film and being electrically connected to the thin film transistor, wherein said second transparent conductive film extends over said second interlayer insulating film, wherein a capacitor is formed between the first and second transparent conductive films with the capacitance insulating film interposed therebetween, wherein the second interlayer insulating film comprises a light shielding resin material. - View Dependent Claims (10, 11, 12, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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at least a thin film transistor formed on an insulating surface;
a first interlayer insulating film covering the thin film transistor;
a first transparent conductive film formed on the first interlayer insulating film;
a capacitance insulating film formed on the first transparent conductive film;
an opening portion formed by patterning the first transparent conductive film and the capacitance insulating film;
a second interlayer insulating film covering the opening portion and overlapping a portion of the first transparent conductive film and the capacitance insulating film;
a contact hole formed in the first interlayer insulating film and the second interlayer insulating film to reach the thin film transistor;
a second transparent conductive film formed on the capacitance insulating film and being electrically connected to the thin film transistor, wherein a capacitor is formed between the first and second transparent conductive films with the capacitance insulating film interposed therebetween, wherein the opening portion has a step-like shape. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A semiconductor device comprising:
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at least a thin film transistor formed on an insulating film;
a first interlayer insulating film covering the thin film transistor;
a first transparent conductive film formed on the first interlayer insulating film;
a capacitance insulating film formed on the first transparent conductive film;
an opening portion formed in the first transparent conductive film and the capacitance insulating film;
a second interlayer insulating film covering the opening portion and overlapping a portion of the first transparent conductive film and the capacitance insulating film;
a contact hole formed in the first interlayer insulating film and the second interlayer insulating film to reach the thin film transistor;
a second transparent conductive film formed on the capacitance insulating film and being electrically connected to the thin film transistor, wherein a capacitor is formed between the first and second transparent conductive films with the capacitance insulating film interposed therebetween, wherein the first transparent conductive film and the capacitance insulating film have a same pattern shape. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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Specification