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Semiconductor device and method of manufacturing the same

  • US 6,690,031 B1
  • Filed: 04/20/1999
  • Issued: 02/10/2004
  • Est. Priority Date: 04/28/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • at least a thin film transistor formed on an insulating film;

    a first interlayer insulating film covering the thin film transistor;

    a first transparent conductive film formed on the first interlayer insulating film;

    a capacitance insulating film formed on the first transparent conductive film;

    an opening portion formed by patterning the first transparent conductive film and the capacitance insulating film;

    a second interlayer insulating film covering the opening portion and overlapping a portion of the first transparent conductive film and the capacitance insulating film;

    a contact hole formed in the first interlayer insulating film and the second interlayer insulating film to reach the thin film transistor;

    a second transparent conductive film formed on the capacitance insulating film and being electrically connected to the thin film transistor, wherein a capacitor is formed between the first and second transparent conductive films with the capacitance insulating film interposed therebetween, wherein the opening portion has a larger diameter than the contact hole.

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