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Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof

  • US 6,690,064 B2
  • Filed: 10/22/2002
  • Issued: 02/10/2004
  • Est. Priority Date: 02/01/2001
  • Status: Expired due to Term
First Claim
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1. An image display device comprising:

  • (a) an image display part;

    (b) an image display circuit controlling a display of said image display part and including at least a data driver, a gate driver, and a buffer amplifier; and

    (c) a peripheral circuit part positioned in the neighborhood of said image display circuit and controlling said image display circuit, wherein said image display circuit and said peripheral circuit part are integrated on the same substrate as the substrate constituting said image display device, said image display circuit and said peripheral circuit part further comprise an insulator substrate, a poly-crystalline Si1−

    x
    Gex thin film formed on said insulator substrate in which a Ge concentration x is 0<

    x<

    1, and a Ge concentration x in the poly-crystalline thin film is larger in a grain boundary than a portion where a Ge concentration in an interior crystal grain of the poly-crystalline thin film becomes a minimum value, and a circuit part constituted by integrating a plurality of pieces of transistors constituted of sources, drains, channels, and gates formed on said poly-crystalline Si1−

    x
    Gex thin film, and said circuit part includes a CMOS type transistor making present as mixture either one or both of p type transistors or/and n type transistors.

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