Cache test sequence for single-ported row repair CAM

• US 6,691,252 B2
• Filed: 02/23/2001
• Issued: 02/10/2004
• Est. Priority Date: 02/23/2001
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Hughes, Brian William, Howlett, Warren Kurt
• Primary Examiner(s): Iqbal, Nadeem
• Assistant Examiner(s): Damiano, Anne L.
• Application Number:
  US09/792,476
• Publication Number:
  US 20020120887A1
• Time in Patent Office: 1,082 Days
• Field of Search: 714/42, 714/710, 714/711, 714/718, 714/719, 714/30, 365/189.04
• US Class Current: 714/30
• CPC Class Codes: G11C 15/00 Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
• CPC Class Codes: G11C 29/12 Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
• CPC Class Codes: G11C 29/72 with optimized replacement algorithms

Abstract

The present invention incorporates built-in self test and self repair functionality into a semiconductor memory device in which reconfiguration data used to replace faulty memory is stored at the same time testing to identify other faulty memory cells continues. To avoid access contention conflicts to a content addressable memory used to identify rows or groups of rows having faulty memory cells, the built in test function writes test data to each cell at least twice before reading the stored data. By writing twice before reading, contention problems caused by simultaneous updating of the content addressable memory are avoided. That is, even if the content addressable memory is initially unavailable to process address information used to access a memory cell to be tested, repetition of the write process ensure that the data will be properly stored when the memory again becomes available after being updated.

Claims

1. A method of configuring a memory array to replace faulty memory cells with spare memory cells, comprising the steps of:

(i) identifying a first address space including a faulty memory cell;

(ii) attempting to supply data corresponding to a second address space to a content addressable memory;

(iii) attempting to access at least one memory cell addressed in response to step (ii);

(iv) writing, during at least some portion of a period including the performance of at least one of steps (ii) and (iii), data into said content addressable memory corresponding to said first address space;

(v) reattempting to supply said data corresponding to said second address space to said content addressable memory;

(vi) reattempting to access said at least one memory cell addressed in response to step (iv); and

(vii) processing data from said at least one memory cell.

2. The method of claim 1 wherein steps (i) through (vii) are repeated and step (v) is performed immediately after completion of step (iii).

3. The method of claim 1 further including a step (viii) of introducing a processing delay between a performance of step (i) and step (v).

4. The method of claim 1 wherein said first address space specifies a row of the array.

5. The method of claim 1 further comprising a step of mapping said first address space into an address space of a spare row of memory cells.

6. The method of claim 5 further comprising the steps of:

configuring columns of said memory array to replace one of said columns including said remaining faulty memory cell with a spare one of said columns; and

identifying at least a remaining one of said faulty memory cells after said configuring step.

7. The method of claim 5 further comprising a step of counting a number of said faulty memory cells in at least one column of said memory array.

8. The method of claim 5 further comprising a step of detecting a number of said faulty memory cells in at least one column of said memory array satisfying a threshold criteria.

9. A memory comprising:

an array of memory cells including spare memory cells;

memory cell address logic including;

(i) a content addressable memory storing data representing address spaces corresponding to faulty ones of said memory cells, and

(ii) memory cell configuration logic responsive to an output of said content addressable memory for mapping said address spaces corresponding to said faulty memory cells address spaces to respective address spaces of ones of said spare memory cells;

test logic configured to perform testing operations to;

(i) identify a first address space including a faulty memory cell,

(ii) attempting to supply data corresponding to a second address space to said content addressable memory,

(iii) attempt to access at least one memory cell in said second address space,

(iv) reattempting to supply said data corresponding to said second address space to said content addressable memory,

(v) reattempt to access at least one memory cell addressed, and

(vi) processing data from said at least one memory cell;

memory repair logic configured to, during at least some period overlapping execution of one of said attempting to supply data and attempt to access testing operations by said test logic, write data corresponding to said first address space into said content addressable memory.

10. The memory according to claim 9 wherein said test logic repeatedly executes said testing operations (i) through (vi) are repeated in the enumerated order and memory repair logic is responsive to an outcome of said compare test operation to write said data corresponding to said first address space into said content addressable memory.

11. The memory according to claim 9 wherein said first address space specifies a row of the array.

12. The memory according to claim 9 wherein said content addressable memory includes a plurality of memory locations for storing a corresponding plurality of datum corresponding to address spaces of rows of said array of memory cells including faulty ones of said memory cells.

13. The memory according to claim 12 wherein each of said address spaces defines a plurality of rows of said array of memory cells.

14. The memory according to claim 9 wherein said memory cell address logic is operative to map said first address space into an address space of a spare row of said spare memory cells.

15. The memory according to claim 14 wherein

said memory cell address logic is operative to configure columns of said array of memory cells to replace one of said columns including faulty memory cell with a spare one of said columns; and

said test logic is further configured to identify at least one faulty memory cell remaining after said memory cell address logic reconfigures said columns of said array.

16. The memory according to claim 14 further comprising counting logic configured to count a number of said faulty memory cells in at least one column of said array of memory cells.

17. The memory according to claim 14 wherein said test logic is further configured to detect a number of said faulty memory cells in at least one column of said array of memory cells, said number satisfying a threshold criteria.

18. A semiconductor memory device comprising:

an array of memory cells including spare memory cells;

first means for identifying a first address space including a faulty memory cell;

second means for attempting to supply, to a content addressable memory, data corresponding to a second address space;

third means for attempting to access at least one memory cell within said second address space;

fourth means operable during an operation of one of said second and third means for addressing data into said content addressable memory corresponding to said first address space;

fifth means for attempting to resupplying to said content addressable memory said data corresponding said second address space;

sixth means for reattempting to access said test data into said at least one memory cell; and

seventh means for processing data from said at least one memory cell.

19. The semiconductor memory device according to claim 18 wherein said first address space specifies a row of the array.

20. The semiconductor memory device according to claim 18 further comprising:

eighth means for identifying at least a first one of said faulty memory cells; and

ninth means for configuring columns of said memory array to replace one of said columns including said remaining first faulty memory cell with a spare one of said columns.