Methods for marking a bare semiconductor die
First Claim
1. A method of marking a packaged semiconductor device comprising:
- providing a semiconductor die having a reduced cross-section;
packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;
subsequently exposing at least a portion of said tape to optical energy; and
forming a mark.
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Accused Products
Abstract
The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multi-level laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electro-magnetic radiation.
64 Citations
84 Claims
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1. A method of marking a packaged semiconductor device comprising:
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providing a semiconductor die having a reduced cross-section;
packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;
subsequently exposing at least a portion of said tape to optical energy; and
forming a mark. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
applying a second tape over at least a portion of a surface of said tape; and
exposing at least a portion of said second tape.
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11. The method of claim 10, wherein said second tape is a carrier tape.
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12. The method of claim 11, wherein said carrier tape includes a carrier tape having translucent properties.
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13. The method of claim 11, wherein said second tape includes a tape having optical energy-markable properties.
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14. The method of claim 1, wherein said tape comprises polytetrafluoroethylene tape.
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15. The method of claim 1, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:
- YAG laser (yttrium aluminum garnet), an Nd;
YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.
- YAG laser (yttrium aluminum garnet), an Nd;
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16. The method of claim 1, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.
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17. The method of claim 16, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
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18. The method of claim 1, wherein said tape includes a tape having antistatic capacities.
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19. The method of claim 1, wherein said tape includes a tape of a thermally dissipating material.
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20. The method of claim 1, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.
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21. The method of claim 1, wherein said forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.
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22. A method of marking a packaged semiconductor device having a semiconductor die comprising:
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packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;
subsequently exposing at least a portion of said tape to optical energy; and
forming a mark. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
applying a second tape over at least a portion of a surface of said tape; and
exposing at least a portion of said second tape.
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32. The method of claim 31, wherein said second tape is a carrier tape.
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33. The method of claim 32, wherein said carrier tape includes a carrier tape having translucent properties.
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34. The method of claim 32, wherein said second tape includes a tape having optical energy-markable properties.
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35. The method of claim 22, wherein said tape comprises polytetrafluoroethylene tape.
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36. The method of claim 22, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:
- YAG laser (yttrium aluminum garnet), Nd;
YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.
- YAG laser (yttrium aluminum garnet), Nd;
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37. The method of claim 22, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.
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38. The method of claim 37, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
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39. The method of claim 22, wherein said tape includes a tape having antistatic capacities.
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40. The method of claim 22, wherein said tape includes a tape of a thermally dissipating material.
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41. The method of claim 22, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.
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42. The method of claim 22, wherein said forming said mark includes at least one of heating, chemically reacting, or transferring materials comprising said tape.
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43. A method of marking a semiconductor die comprising:
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providing a semiconductor die having a reduced cross-section;
packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;
subsequently exposing at least a portion of said tape to optical energy; and
forming a mark. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63)
applying a second tape over at least a portion of a surface of said tape; and
exposing at least a portion of said second tape.
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53. The method of claim 52, wherein said second tape is a carrier tape.
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54. The method of claim 53, wherein said carrier tape includes a carrier tape having translucent properties.
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55. The method of claim 53, wherein said second tape includes a tape having optical energy-markable properties.
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56. The method of claim 43, wherein said tape comprises polytetrafluoroethylene tape.
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57. The method of claim 43, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:
- YAG laser (yttrium aluminum garnet), Nd;
YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.
- YAG laser (yttrium aluminum garnet), Nd;
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58. The method of claim 43, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.
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59. The method of claim 58, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
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60. The method of claim 43, wherein said tape includes a tape having antistatic capacities.
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61. The method of claim 43, wherein said tape includes a tape of a thermally dissipating material.
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62. The method of claim 43, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.
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63. The method of claim 43, wherein said forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.
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64. A method of marking a semiconductor die after a thinning process for reducing a thickness of said semiconductor die, said semiconductor die having an active surface and a thinned surface, said method comprising:
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applying a tape having optical energy-markable properties to at least a portion of said thinned surface of said semiconductor die;
subsequently exposing at least a portion of said tape to optical energy; and
forming a mark on a portion of said semiconductor die. - View Dependent Claims (65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84)
applying a second tape over at least a portion of a surface of said tape; and
exposing at least a portion of said second tape.
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74. The method of claim 73, wherein said second tape is a carrier tape.
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75. The method of claim 74, wherein said carrier tape includes a carrier tape having translucent properties.
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76. The method of claim 74, wherein said second tape includes a tape having optical energy-markable properties.
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77. The method of claim 64, wherein said tape comprises polytetrafluoroethylene tape.
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78. The method of claim 64, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:
- YAG laser (yttrium aluminum garnet), Nd;
YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.
- YAG laser (yttrium aluminum garnet), Nd;
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79. The method of claim 64, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.
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80. The method of claim 79, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
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81. The method of claim 64, wherein said tape includes a tape having antistatic capacities.
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82. The method of claim 64, wherein said tape includes a tape of a thermally dissipating material.
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83. The method of claim 64, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.
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84. The method of claim 64, wherein said forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.
Specification