Resin-encapsulated semiconductor device and method for manufacturing the same

• US 6,692,991 B2
• Filed: 08/29/2002
• Issued: 02/17/2004
• Est. Priority Date: 12/05/2001
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Minamio, Masanori, Nomura, Toru
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US10/230,297
• Publication Number:
  US 20030102575A1
• Time in Patent Office: 537 Days
• Field of Search: 438/110, 438/111, 438/112, 438/121, 438/123, 438/124, 438/125, 438/126, 438/127, 257/666, 257/669, 257/673, 257/676
• US Class Current: 438/123
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49524 the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49548 Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires

Abstract

The resin-encapsulated semiconductor device of the present invention includes: a die pad provided by thinning a lower portion of a lead frame; a semiconductor chip mounted on the die pad; a plurality of leads provided by thinning an upper portion of the lead frame; a connection member for connecting the semiconductor chip and the lead with each other; a plurality of suspension leads connected to the die pad; and an encapsulation resin for encapsulating an upper portion of the lead frame. In this way, it is possible to further reduce the thickness of a resin-encapsulated semiconductor device, while upsetting the die pad. Furthermore, the stress occurring from the encapsulation resin is absorbed by the self flexural deformation of the die pad and the lead, which are thinned, thereby improving the connection reliability.

Claims

1. A method for manufacturing a resin-encapsulated semiconductor device including a die pad, a semiconductor chip mounted on the die pad, a lead connected to the semiconductor chip by a connection member, and a suspension lead, the method comprising the steps of:

(a) preparing a lead frame including the die pad, the lead and the suspension lead for supporting the die pad; and

(b) thinning a lower portion of the die pad and an upper portion of the lead so that an upper surface of the die pad is located higher than an upper surface of the lead, and a lower surface of the die pad is located higher than a lower surface of the lead.

2. The method for manufacturing a resin-encapsulated semiconductor device of claim 1, wherein the step (b) further includes a step (b2) of thinning at least a portion of the suspension lead that is close to the die pad.

3. The method for manufacturing a resin-encapsulated semiconductor device of claim 1, wherein in the step (b), the lower portion of the die pad and the upper portion of the lead are thinned by a half etching process.

4. The method for manufacturing a resin-encapsulated semiconductor device of claim 1, wherein in the step (b), at least a portion of each of the die pad and the lead whose thicknesses are both 200 μ

mm to 300 μ

mm is thinned so that the thicknesses of the die pad and the lead are both 100 μ

mm to 150 μ

mm.