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Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating

  • US 6,693,024 B2
  • Filed: 06/10/2002
  • Issued: 02/17/2004
  • Est. Priority Date: 06/08/2001
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a vertical semiconductor component, which comprises the following steps:

  • providing a semiconductor body with a first and a second surface;

    fabricating a multiplicity of pores in the semiconductor body, the pores proceeding from the first surface, extending into the semiconductor body, and ending within the semiconductor body;

    increasing an electrical conductivity of the semiconductor body in the region of the pores for producing a low ohmic connection zone including the pores and the semiconductor material surrounding the pores; and

    producing active regions with pn-junctions in a region not permeated by the pores and adjacent the second surface, the active regions to be contacted by the first surface over the low ohmic connection zone.

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