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Semiconductor device of SOI structure

  • US 6,693,326 B2
  • Filed: 04/02/2001
  • Issued: 02/17/2004
  • Est. Priority Date: 04/04/2000
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device including SOI structure, the semiconductor device comprising:

  • a surface semiconductor layer in a floating state, which is stacked on a buried insulating film so as to form an SOI substrate, source/drain regions of second conductivity type which are formed in the surface semiconductor layer, a channel region of first conductivity type between the source/drain regions, a gate electrode formed over the channel region and a gate insulating film, wherein the surface semiconductor layer comprises only a single potential well of the first conductivity type formed therein at and/or near only one end of the channel region in a gate width direction thereof and wherein a first part of the potential well includes an impurity concentration higher than that of the channel region so as to cause majority carriers to migrate toward the potential well, and wherein a second part of the potential well not having an impurity concentration higher than that of the channel region has a length (Lpn) that is longer than a length (Wpn) of the first part of the potential well that has an impurity concentration higher than that of the channel region.

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