Self-passivating Cu laser fuse

• US 6,693,343 B2
• Filed: 12/28/2000
• Issued: 02/17/2004
• Est. Priority Date: 12/28/2000
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Barth, Hans-Joachim
• Primary Examiner(s): ECKERT II, GEORGE C
• Application Number:
  US09/751,554
• Publication Number:
  US 20020084507A1
• Time in Patent Office: 1,146 Days
• Field of Search: 257/209, 257/529, 337/152, 337/159, 337/160, 438/132, 438/281, 438/333, 438/467, 438/601
• US Class Current: 257/529
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In an integrated circuit structure, the improvement comprising a self-passivating Cu-laser fuse characterized by resistance to oxidation and corrosion and improved adhesion in the interface between Cu and metallization lines and Cu and a dielectric cap subsequent to blowing the fuse by an energizing laser, the fuse comprising:

a metallization-line;

a liner separating the metallization line and a combination Cu-alloy seed layer and a pure Cu layer;

a dielectric surrounding the liner; and

a dielectric cap disposed over the surrounding dielectric, the liner and the combination Cu-alloy seed layer and pure Cu layer; the laser fuse being characterized after Laser energizing by passivation areas:

a) on the open Cu-fuse surface; and

b) in the interfaces between:

(i) the Cu-alloy seed layer and the liners and dielectric; and

(ii) between the pure Cu layer and the dielectric cap.

Claims

1. In an integrated circuit structure, the improvement comprising a self-passivating Cu-laser fuse characterized by resistance to oxidation and corrosion and improved adhesion in the interface between Cu and metallization lines and Cu and a dielectric cap, subsequent to blowing the fuse by an energizing laser, said fuse comprising:

a) a metallization-line;

b) a liner separating said metallization line and a combination Cu-alloy seed layer and pure Cu layer;

c) a dielectric surrounding said liner; and

d) a dielectric cap disposed over said surrounding dielectric, said liner and said combination Cu-alloy seed layer and pure Cu layer; and

e) a passivation layer of oxide, nitride or combinations of nitrides deposited on said cap layer that has been annealed at a temperature of from about 250°

C. to about 450°

C.;

said laser fuse being characterized after laser energizing by passivation areas;

f) on the open Cu-fuse surface; and

g) in the interfaces between;

(i) said Cu-alloy seed layer and said liners and dielectric; and

(ii) between said pure Cu layer and said dielectric cap.

2. The structure of claim 1 wherein dopant in said passivation areas is present in a range of from about 0.1 to about 5.0% by weight of said Cu-alloy.

3. The structure of claim 2 wherein said Cu-alloy is selected from the group consisting of Cu—

Al, Cu—

Mg and Cu—

Li.

4. The structure of claim 3 wherein said Cu-alloy is Cu—

Al.

5. The structure of claim 3 wherein said Cu-alloy is Cu—

Mg.

6. The structure of claim 3 wherein said Cu-alloy is Cu—

Li.