Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure

• US 6,693,350 B2
• Filed: 12/18/2002
• Issued: 02/17/2004
• Est. Priority Date: 11/24/1999
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fukuda, Yutaka, Teshima, Takanori, Mamitsu, Kuniaki, Makino, Tomoatsu, Nakase, Yoshimi
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US10/321,365
• Publication Number:
  US 20030132530A1
• Time in Patent Office: 426 Days
• Field of Search: 257/718, 257/712, 257/723, 257/787, 257/796, 257/181
• US Class Current: 257/712
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73215 Layer and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83951 Forming additional members, e.g. for reinforcing, fillet sealant
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.

Claims

1. A semiconductor device comprising:

a first conductive member;

a second conductive member;

a semiconductor chip, which is located between the conductive members;

a bonding member, which is located between the first conductive member and the semiconductor chip;

another bonding member, which is located between the second conductive member and the semiconductor chip;

a molding resin, which is located between the first and second conductive members to seal the semiconductor chip and bonding members; and

a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members, wherein the bonding member anti-sticking means has prevented the bonding members from sticking to the surface.

2. The semiconductor device in claim 1, wherein the first conductive member includes a coupler and wherein the surface is a part of the coupler.

3. The semiconductor device in claim 1, wherein the bonding member anti-sticking means is a resin film.

4. The semiconductor device in claim 1, wherein the bonding member anti-sticking means is a flange.

5. The semiconductor device in claim 1 further comprising:

another semiconductor chip, which is located between the conductive members;

another bonding member, which is located between the first conductive member and the another semiconductor chip;

another bonding member, which is located between the second conductive member and the another semiconductor chip; and

another bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the another semiconductor chip and the conductive members, wherein the semiconductor chips are electrically connected in parallel.

6. The semiconductor device in claim 5, wherein the first conductive member includes another coupler and wherein the surface of one member selected from the group consisting of the another semiconductor chip and the conductive members is a part of the another coupler.

7. The semiconductor device in claim 5, wherein one of the semiconductor chips is an insulated gate bipolar transistor and wherein the other of the semiconductor chips is a fly-wheel diode.

8. The semiconductor device in claim 5, wherein one of the semiconductor chips is a MOSFET.

9. A semiconductor device comprising:

a first heat radiation plate;

a second heat radiation plate;

a semiconductor chip, which is located between the first and second heat radiation plates;

a coupler, which is located between the semiconductor chip and the first heat radiation plate;

a first bonding member, which is located between the coupler and the semiconductor chip;

a second bonding member, which is located between the second heat radiation plate and the semiconductor chip;

a third bonding member, which is located between the coupler and the first heat radiation plate;

a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and

a coating, which is located on a surface of the coupler, wherein the coating has prevented the first and third bonding members from sticking to the surface by permitting the first and third bonding members to dewet the coating.

10. The semiconductor device in claim 9, wherein the coating is an oxide film that includes the oxide of a material making up the coupler.

11. The semiconductor device in claim 9, wherein the coating is a resin film.

12. The semiconductor device in claim 11, wherein the resin film includes one resin selected the group that consists of polyimide resin, polyamide resin, and amide resin.

13. A semiconductor device comprising:

a first heat radiation plate;

a second heat radiation plate;

a semiconductor chip, which is located between the first and second heat radiation plates;

a coupler, which is located between the semiconductor chip and the first heat radiation plate;

a first bonding member, which is located between the coupler and the semiconductor chip;

a second bonding member, which is located between the second heat radiation plate and the semiconductor chip;

a third bonding member, which is located between the coupler and the first heat radiation plate;

a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and

a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface.

14. The semiconductor device in claim 13 further comprising a coating, which is located on a surface of the coupler and on a surface of the flange, wherein the coating has prevented the first and third bonding members from sticking to the surfaces by permitting the first and third bonding members to dewet the coating.

15. The semiconductor device in claim 14, the coating is an oxide film that includes the oxide of a material-making up the coupler.

16. A semiconductor device comprising:

a first heat radiation plate;

a second heat radiation plate;

a semiconductor chip, which is located between the first and second heat radiation plates;

a coupler, which is located between the semiconductor chip and the first heat radiation plate;

a first bonding member, which is located between the coupler and the semiconductor chip;

a second bonding member, which is located between the second heat radiation plate and the semiconductor chip;

a third bonding member, which is located between the coupler and the first heat radiation plate;

a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and

a plating layer, which is located between the coupler and one of the first and third bonding members to increase the wettability of the bonding member to the coupler, wherein no plating layer is located between the molding resin and the coupler.

17. The semiconductor device in claim 16 further comprising a coating, which is located on a surface of the coupler, wherein the coating has prevented the first and third bonding members from sticking to the surface by permitting the first and third bonding members to dewet the coating.

18. The semiconductor device in claim 17, the coating is an oxide film that includes the oxide of a material making up the coupler.

19. The semiconductor device in claim 16 further comprising a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface.

20. The semiconductor device in claim 17 further comprising a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface where the flange is located.

21. A semiconductor device comprising:

a first heat radiation plate;

a second heat radiation plate;

a semiconductor chip, which is located between the first and second heat radiation plates;

a coupler, which is located between the semiconductor chip and the first heat radiation plate, wherein the coupler is electrically connected to the semiconductor chip;

a first bonding member, which is located between the coupler and the semiconductor chip;

a second bonding member, which is located between the second heat radiation plate and the semiconductor chip;

a third bonding member, which is located between the coupler and the first heat radiation plate;

a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and

a bonding member anti-sticking means, which is located between the molding resin and a surface of the coupler, wherein the bonding member anti-sticking means has prevented the first and third bonding members from sticking to the surface.

22. The semiconductor device in claim 21, wherein the bonding member anti-sticking means is an oxide film that includes the oxide of a material making up the coupler.

23. The semiconductor device in claim 21, wherein the bonding member anti-sticking means is a resin film.

24. The semiconductor device in claim 23, wherein the resin film includes one resin selected the group that consists of polyimide resin, polyamide resin, and amide resin.

25. The semiconductor device in claim 21, wherein the bonding member anti-sticking means is a flange, which is located on the surface.