Packaging of integrated circuits and vertical integration

• US 6,693,361 B1
• Filed: 11/16/2000
• Issued: 02/17/2004
• Est. Priority Date: 12/06/1999
• Status: Expired due to Term

• Current Assignee: Invensas Corporation
• Original Assignee: Tru-Si Technologies, Inc.
• Inventors: Savastiouk, Sergey, Siniaguine, Oleg
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US09/716,092
• Time in Patent Office: 1,188 Days
• Field of Search: 257/774, 257/777, 257/778
• US Class Current: 257/777
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/02 Bonding areas; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/1319 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/1357 Single coating layer
• CPC Class Codes: H01L 2224/136 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16237 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/81191 wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: Y10S 438/977 : Thinning or removal of substrate
• CPC Class Codes: Y10T 428/12507 : More than two components

Abstract

A first level packaging wafer is made of a semiconductor or insulating material. The bumps on the wafer are made using vertical integration technology, without solder or electroplating. More particularly, vias are etched part way into a first surface of the substrate. Metal is deposited into the vias. Then the substrate is blanket-etched from the back side until the metal is exposed and protrudes from the vias to form suitable bumps. Dicing methods and vertical integration methods are also provided. Solder or electroplating are used in some embodiments.

Claims

1. A structure comprising:

a first semiconductor wafer having one or more first through holes going through the first semiconductor wafer at a boundary of at least one die which is part of the first semiconductor wafer and which comprises at least a portion of a semiconductor substrate, the one or more first through holes being located outside of the die; and

a second semiconductor wafer bonded to the first semiconductor wafer.

2. The structure of claim 1 wherein the first semiconductor wafer has a first side bonded to the second semiconductor wafer and a second side opposite to the first side, wherein the one or more first through holes extend between the first and second sides of the first semiconductor wafer, and the through holes are filled with a filler visible on the second side of the first semiconductor wafer.

11. The structure of claim 1 wherein the first through holes are positioned on one or more scribe lines on the first semiconductor wafer.

12. The structure of claim 1 wherein the semiconductor substrate is a silicon substrate.

13. The structure of claim 1 wherein the first semiconductor wafer comprises a transistor.

14. The structure of claim 1 wherein the die comprises an electrostatic discharge protection circuit or an overvoltage protection circuit.

15. The structure of claim 1 wherein:

the semiconductor substrate comprises a first side facing the second semiconductor wafer and a second side opposite to the first side, wherein one or more second through holes extend between the first and second sides of the semiconductor substrate at a location of the die;

the structure comprises a conductive feature in each second through hole, the conductive feature protruding on the second side out of the corresponding second through hole.

16. The structure of claim 15 wherein the conductive feature comprises a conductive layer that extends between the first and second sides of the semiconductor substrate through the corresponding second through hole.

3. A structure comprising:

a first chip or wafer comprising a first substrate made of a semiconductor or insulating material, one or more through holes that go through the first substrate, a first contact at each said through hole, wherein the first chip or wafer comprises, in each said through hole, at least a part of at least one conductive layer having a portion protruding from the first chip or wafer through the through hole, wherein the first contact at the through hole comprises at least a part of the protruding portion, the conductive layer extending laterally outward from the protruding portion as the conductive layer moves into the through hole from the protruding portion; and

a wiring substrate to which the first contacts are directly attached, wherein the wiring substrate does not include a semiconductor substrate, the wiring substrate having one or more conductive lines for providing electrical connection to the first chip or wafer.

4. The structure of claim 3 wherein the wiring substrate is a printed wiring board.

5. The structure of claim 3 wherein the first substrate is a semiconductor substrate.

6. The structure of claim 3 wherein:

each first contact protrudes from a first surface of the first chip or wafer;

the first chip or wafer comprises a second surface opposite to the first surface, and one or more second contacts at the second surface; and

the structure comprises a second chip or wafer having one or more contacts directly attached to the second contacts.

7. The structure of claim 3 wherein:

each first contact protrudes from a first surface of the first chip or wafer;

the first chip or wafer comprises a second surface opposite to the first surface; and

the through holes widen as they go from the first surface towards the second surface.

8. A structure comprising:

a first semiconductor wafer comprising a semiconductor die, the first semiconductor wafer having a via going through the first semiconductor wafer, the via laterally completely surrounding the die; and

a second semiconductor wafer bonded to the first semiconductor wafer, the second semiconductor wafer being bonded to the die.

9. The structure of claim 8 wherein the via is filled with a filler.

10. The structure of claim 9 wherein the first semiconductor wafer has a first side bonded to the second semiconductor wafer and a second side opposite to the first side, and the filler is visible on the second side of the first semiconductor wafer.

17. The structure of claim 8 wherein the via extends along entire scribe lines on the first semiconductor wafer.

18. The structure of claim 8 wherein the first semiconductor wafer comprises a transistor.

19. The structure of claim 8 wherein the die comprises an electrostatic discharge protection circuit or an overvoltage protection circuit.

20. The structure of claim 8 wherein:

the die comprises at least a portion of a semiconductor substrate having a first side facing the second semiconductor wafer and a second side opposite to the first side, wherein one or more through holes extend through the semiconductor substrate between the first and second sides of the semiconductor substrate at a location of the die;

the structure comprises a conductive feature in each through hole, the conductive feature protruding on the second side out of the corresponding through hole.

21. The structure of claim 20 wherein the conductive feature comprises a conductive layer that extends between the first and second sides of the semiconductor substrate through the corresponding through hole.

28. The structure of claim 8 wherein the die is one of a plurality of dice in the first semiconductor wafer, the via laterally completely surrounds each of the dice and separates the dice from each other, and the second semiconductor wafer is bonded to each of the dice.

22. A structure comprising:

a first wafer comprising a semiconductor substrate, the first wafer having a surface having one or more scribe lines thereon;

at least one via going through the semiconductor substrate, the via being positioned on the one or more scribe lines; and

a second wafer comprising a semiconductor substrate, the second wafer being bonded to the first wafer.

23. The structure of claim 22 wherein the one or more scribe lines completely surround a die comprising at least a portion of the semiconductor substrate, and the via extends along the scribe lines to completely surround the die.

24. The structure of claim 22 wherein the first wafer comprises a transistor.

25. The structure of claim 22 wherein the die comprises an electrostatic discharge protection circuit or an overvoltage protection circuit.

26. The structure of claim 22 wherein:

the die comprises at least a portion of the semiconductor substrate, and the semiconductor substrate has a first side facing the second wafer and a second side opposite to the first side, wherein one or more through holes extend through the semiconductor substrate between the first and second sides of the semiconductor substrate at a location of the die;

the structure comprises a conductive feature in each through hole, the conductive feature protruding on the second side out of the corresponding through hole.

27. The structure of claim 26 wherein the conductive feature comprises a conductive layer that extends between the first and second sides of the semiconductor substrate through the corresponding through hole.

29. The structure of claim 23 wherein the die is one of a plurality of dice each of which comprises a portion of the semiconductor substrate, and the via completely surrounds each of the dice and separates the dice from each other.