Shift multi-exposure method
First Claim
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1. A shift multiexposure method for defining a regular pattern by a photomask, the method comprising the following steps:
- providing a substrate;
forming a photoresist layer on the substrate, wherein the photoresist layer comprises a first region and a second region;
defining a first pattern on the first region by a photomask;
shifting the photomask a predetermined distance, then defining a second pattern on the second region by the photomask, wherein the predetermined distance is less than half of the wavelength of the exposure; and
performing development to display the first pattern and the second pattern on the photoresist layer, wherein the regular pattern is composed by the first pattern and the second pattern.
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Abstract
The present invention provides a shift multi-exposure method for defining a regular pattern by a photomask. The method comprises the following steps. First, a photoresist layer comprising a first region and a second region is formed on a substrate. Then, a first pattern is defined on the first region by the photomask. Next, the photomask is moved a predetermined distance, and a second pattern is defined on the second region by the photomask. Finally, development is performed to display the first pattern and the second pattern on the photoresist layer.
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4 Claims
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1. A shift multiexposure method for defining a regular pattern by a photomask, the method comprising the following steps:
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providing a substrate;
forming a photoresist layer on the substrate, wherein the photoresist layer comprises a first region and a second region;
defining a first pattern on the first region by a photomask;
shifting the photomask a predetermined distance, then defining a second pattern on the second region by the photomask, wherein the predetermined distance is less than half of the wavelength of the exposure; and
performing development to display the first pattern and the second pattern on the photoresist layer, wherein the regular pattern is composed by the first pattern and the second pattern. - View Dependent Claims (2)
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3. A shift multi-exposure method for defining a pattern element by a photomask, the method comprising the following steps:
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providing a substrate;
forming a photoresist layer on the substrate, wherein the photoresist layer comprises a first region and a second region;
defining the pattern element on the first region by the photomask;
shifting the photomask a predetermined distance, then defining the pattern element on the second region by the photomask, wherein the predetermined distance is less than half the wavelength of the exposure; and
performing development to display the pattern elements on the photoresist layer, then photoresist layer comprising regular pattern elements. - View Dependent Claims (4)
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Specification