Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication

• US 6,696,308 B1
• Filed: 10/27/2000
• Issued: 02/24/2004
• Est. Priority Date: 10/27/2000
• Status: Expired due to Fees

• Current Assignee: Viavi Solutions, Inc. (Lumentum Holdings Inc.)
• Original Assignee: Viavi Solutions, Inc. (Lumentum Holdings Inc.)
• Inventors: Shieh, Chan-Long, Tsao, Jeff
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US09/699,112
• Time in Patent Office: 1,215 Days
• Field of Search: 438/22, 438/24, 438/29, 438/28, 438/34, 438/40, 438/41, 438/42, 438/43, 438/44, 438/46, 438/47
• US Class Current: 438/24
• CPC Class Codes: H01S 5/02461 Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18363 comprising air layers
• CPC Class Codes: H01S 5/3235 emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Abstract

A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser includes epitaxially growing a stack of alternate layers of a first material and a second material on a compatible substrate. A long wave-length active region is epitaxially grown on the stack and a lasing aperture and current confinement volume are defined in the long wave-length active region. A first mirror stack is formed on the long wave-length active region and portions of one of the first material and the second material are removed to form a high reflectivity second mirror stack.

Claims

1. A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser comprising the steps of:

epitaxially growing an indium phosphide based stack of alternate layers of a first material and a second material, including epitaxially growing alternate layers of InP and one of InGaAsP and InAlGaAs, on a compatible indium phosphide based substrate;

epitaxially growing a long wave-length indium phosphide based active region on the stack wherein the long wave-length active region substantially emits light at a wavelength in a range from approximately 1.2 microns to 2 microns;

defining a lasing aperture and current confinement volume in the long wave-length active region;

forming a first mirror stack by metamorphically growing a distributed Bragg reflector on the long wave-length active region in alignment with the lasing aperture and current confinement volume; and

removing by etching portions of one of the first material and the second material in the lasing aperture to form a mirror stack with a high reflectivity portion and retaining the one of the first material and the second material adjacent to and partially surrounding the lasing aperture and in thermal contact with the active region to provide a high thermal conductivity portion for dissipating a substantial amount of heat from the long wave-length active region, by selectively undercutting the InP layers in alignment with the lasing aperture and current confinement volume.

2. A method of fabricating an electrically pumped long-wavelength vertical cavity surface emitting laser as claimed in claim 1 wherein the step of metamorphically growing a distributed Bragg reflector includes one of growing alternate layers of micro-crystalline silicon and micro-crystalline silicon carbide, growing alternate layers of micro-crystalline silicon and micro-crystalline aluminum oxide, and growing alternate layers of Al_xGa_1-xAs and Al_yGa_1-yAs, where x is in a range of from approximately 0.5 to 1 and y is in a range of from approximately 0 to 0.5.

3. A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser as claimed in claim 1 wherein the step of epitaxially growing the stack of alternate layers of the first material and the second material include epitaxially growing alternate layers of material with a large differential etching capability.

4. A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser as claimed in claim 1 further including a step of depositing an electrical contact on the long wave-length active region prior to the step of forming the first mirror stack on the long wave-length active region.

5. A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser as claimed in claim 4 further including a step of forming a window in the electrical contact in alignment with the lasing aperture and forming the first mirror stack in the window.

6. A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser as claimed in claim 1 wherein the step of defining the lasing aperture and current confinement volume includes forming at least one layer of transformable material in the long wave-length active region having an electrically conductive portion defining the lasing aperture and current confinement volume, the electrically conductive portion being limited by an electrically insulating portion.

7. A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser as claimed in claim 6 wherein the step of forming at least one layer of material in the long wave-length active region having the electrically conductive portion includes depositing a layer of semiconductor material containing aluminum and oxidizing a portion of the aluminum containing semiconductor material to form the electrically insulating portion.