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Increasing the yield of precise wavelength lasers

  • US 6,696,311 B2
  • Filed: 08/24/2002
  • Issued: 02/24/2004
  • Est. Priority Date: 05/03/2001
  • Status: Expired due to Fees
First Claim
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1. A method of increasing the yield of semiconductor laser devices comprising the steps of:

  • a. forming a layered structure on a wafer exhibiting a material gain function region capable of sustaining oscillation at a number of F-P modes, said material gain function normally giving rise to oscillation at a wavelength of λ

    2; and

    b. etching a second-order grating on one of the layers of said structure lying wholly in an unpumped area outside said gain region of said structure where the optical field strength is sufficient to provide feedback to stabilize the wavelength at λ

    1 without creating surface diffraction loss greater than 5 %;

    c. forming a dielectric material layer, instead of semiconductor epitaxial layers, in direct contact with and overlying the length of said grating.

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