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Method for making a semiconductor device having a high-k gate dielectric

  • US 6,696,327 B1
  • Filed: 03/18/2003
  • Issued: 02/24/2004
  • Est. Priority Date: 03/18/2003
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising:

  • forming on a substrate a high-k gate dielectric layer;

    applying a wet chemical treatment to the high-k gate dielectric layer to remove impurities from that layer and to increase the oxygen content of that layer;

    forming a capping layer that comprises silicon and that is less than about five monolayers thick on the high-k gate dielectric layer;

    oxidizing the capping layer by exposing the capping layer to a solution that comprises hydrogen peroxide to form a capping dielectric oxide on the high-k gate dielectric layer; and

    then forming a gate electrode that comprises polysilicon on the capping dielectric oxide.

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