Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode
First Claim
1. A method of integrating a resistor in circuit with a bottom electrode of a micro-electromechanical switch on a substrate, comprising the sequential steps of:
- depositing a uniform layer of a resistor material over at least one side of said substrate;
depositing a uniform layer of a hard mask material over said resistor material;
depositing a uniform layer of a metal material over said hard mask material, wherein said deposited layers form a stack;
patterning and etching a bottom electrode and resistor length from said stack; and
etching said hard mask and metal materials from said patterned resistor length.
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Accused Products
Abstract
The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor.
60 Citations
10 Claims
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1. A method of integrating a resistor in circuit with a bottom electrode of a micro-electromechanical switch on a substrate, comprising the sequential steps of:
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depositing a uniform layer of a resistor material over at least one side of said substrate;
depositing a uniform layer of a hard mask material over said resistor material;
depositing a uniform layer of a metal material over said hard mask material, wherein said deposited layers form a stack;
patterning and etching a bottom electrode and resistor length from said stack; and
etching said hard mask and metal materials from said patterned resistor length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification