Method of removing contamination adhered to surfaces and apparatus used therefor

• US 6,699,330 B1
• Filed: 10/02/2000
• Issued: 03/02/2004
• Est. Priority Date: 09/30/1999
• Status: Expired due to Fees

• Current Assignee: Nomura Micro Science Co.,Ltd., Ums Co., Ltd.
• Original Assignee: Nomura Micro Science Co.,Ltd.
• Inventors: Muraoka, Hisashi
• Primary Examiner(s): CARRILLO, BIBI SHARIDAN
• Application Number:
  US09/676,976
• Time in Patent Office: 1,247 Days
• Field of Search: 134/2, 134/3, 134/19, 134/25.4, 134/26, 134/28, 134/31, 134/32, 134/33, 134/34, 134/36, 134/41, 134/42, 134/902
• US Class Current: 134/3
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: C11D 2111/14 Hard surfaces
• CPC Class Codes: C11D 3/3947 Liquid compositions
• CPC Class Codes: C11D 7/265 Carboxylic acids or salts thereof
• CPC Class Codes: C11D 7/30 Halogenated hydrocarbons
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A method of removing surface-deposited contaminants, comprising bringing an ozone-containing treating solution into contact with the surface of a treating target on which contaminants have deposited. The ozone-containing treating solution comprises an organic solvent having a partition coefficient to ozone in a gas, of 0.6 or more, and ozone having been dissolved in the solvent. Contaminants having deposited on the surfaces of various articles including substrates for electronic devices, such as semiconductor substrates and substrates for liquid crystal display devices can be removed by room-temperature and short-time treatment in a high safety and a good efficiency.

Claims

1. A method of removing organic contaminants deposited on a surface of a substrate of an electronic device, comprising bringing a treating solution into contact with said surface, wherein

said treating solution comprises:

a solvent having a concentration of at least 70% by volume of acetic acid and the remaining balance of water, and

at least 100 ppm of ozone dissolved in said solvent.

2. The method according to claim 1, which comprises feeding said treating solution continuously or intermittently onto the surface of the substrate such that said treating solution flows on said surface in the form of a film.

3. The method according to claim 1, which comprises feeding said solvent, continuously or intermittently, on the surface of the substrate in an ozone-containing gas, wherein ozone in the gas is dissolved in said solvent to form said treating solution containing ozone dissolved therein in a concentration of at least 100 ppm, and whereby the treating solution thus formed flows on said surface in the form of a film.

4. The method according to claim 1, wherein at least 200 ppm of ozone is dissolved in said solvent.

5. The method according to claim 2, which comprises spraying the treating solution on said surface of the substrate.

6. The method according to claim 3, which comprises spraying said solvent on said surface of the substrate in said ozone-containing gas.

7. The method according to claim 3, which comprises heating said solvent to form a vapor thereof, feeding the vapor thus formed onto the surface of the substrate, wherein the surface of said substrate is cooled, and allowing the vapor to condense into the liquid state on the surface of the substrate.