Method of forming a semiconductor device

• US 6,699,799 B2
• Filed: 04/30/2002
• Issued: 03/02/2004
• Est. Priority Date: 05/09/2001
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jung-Il, Park, Kyung-won, Ahn, Dong-Ho, Hong, Soo-Jin
• Primary Examiner(s): Thompson, Craig
• Application Number:
  US10/134,747
• Publication Number:
  US 20020168873A1
• Time in Patent Office: 672 Days
• Field of Search: 438/781, 438/780, 438/770-778
• US Class Current: 438/781
• CPC Class Codes: H01L 21/02134 the material comprising hydrogen silsesquioxane, e.g. HSQ
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Abstract

A method of forming a semiconductor device includes a liner is conformally stacked on a semiconductor substrate before coating an SOG layer thereon, and then curing the SOG layer, preferably in an ambient of oxygen radicals formed at a temperature of 1000° C. or higher when oxygen and hydrogen are supplied. The oxygen radicals are preferably formed by irradiating ultraviolet rays to ozone or forming oxygen plasma. The SOG layer is preferably made of a polysilazane-based material that may promote a conversion of the SOG layer into a silicon oxide layer.

Claims

1. A method of forming a semiconductor device, comprising:

conformally stacking a non-oxidized silicon layer as a liner on a semiconductor substrate having at least one concave region;

coating a spin-on-glass (SOG) layer on the liner to fill the concave region; and

curing the SOG layer.

2. The method as claimed in claim 1, wherein the SOG layer is made of a silazane-based material.

3. The method as claimed in claim 2, wherein the SOG layer is made of an organic polysilazane-based material.

4. The method as claimed in claim 3, wherein the SOG layer is made of a perhydro polysilazane.

5. The method as claimed in claim 1, wherein the non-oxidized silicon layer is made of a material selected from the group consisting of polysilicon and amorphous silicon and is formed to a thickness of from approximately 50 Å

to 300 Å

.

6. The method as claimed in claim 1, further comprising conformally forming an oxygen barrier layer on the semiconductor substrate having the at least one concave region prior to forming the non-oxidized silicon layer.

7. The method as claimed in claim 1, wherein the at least one concave region is a trench for device isolation.

8. The method as claimed in claim 1, further comprising planarizing the SOG layer using a chemical mechanical polishing (CMP) technique before or after curing the SOG layer.

9. The method as claimed in claim 10, further comprising performing a wet etch process using an etch recipe for etching a silicon oxide layer after planarizing the SOG layer.

10. The method as claimed in claim 1, wherein the curing is performed in a vapor ambient of from 700°

C. to 1000°

C.

11. The method as claimed in claim 1, wherein the curing is performed in an oxygen radical ambient.

12. The method as claimed in claim 11, wherein ozone is supplied to a space where the SOG layer is cured and infrared rays are irradiated to the space where the SOG layer is cured in order to form oxygen radicals.

13. The method as claimed in claim 11, wherein gas containing oxygen is supplied to a space where the SOG layer is cured and a high frequency field is formed to be plasma-phase in order to form the oxygen radicals.

14. The method as claimed in claim 11, wherein a space where the SOG layer is cured is heated to a temperature of 1000°

C. or higher and oxygen and hydrogen are supplied thereto in order to form the oxygen radicals.

15. The method as claimed in claim 1, wherein the liner is selected from the group consisting of a silicon nitride layer and a dual-structured layer of a silicon nitride layer and a silicon layer.