Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate of a first conduction type;
an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate, the intrinsic semiconductor layer having a lower impurity concentration than that of the semiconductor substrate;
a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer;
a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and
a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type, the laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer providing a diode for photoelectric conversion, wherein a first insulator layer is formed in at least a portion below the bipolar transistor and a second insulator layer is formed in at least a portion below the MIS transistor, and the first insulator layer is formed at a depth deeper than that of the second insulator layer.
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Accused Products
Abstract
A semiconductor device includes the following: a semiconductor substrate of a first conduction type; an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate; a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer; a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type. The laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer provides a diode for photoelectric conversion. A first insulator layer and a second insulator layer are formed respectively in at least a portion below the bipolar transistor and the MIS transistor. The transistors are isolated from the semiconductor substrate by the insulator layers, so that the characteristics of the transistors can be adjusted independently of the diode.
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Citations
26 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate of a first conduction type;
an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate, the intrinsic semiconductor layer having a lower impurity concentration than that of the semiconductor substrate;
a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer;
a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and
a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type, the laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer providing a diode for photoelectric conversion, wherein a first insulator layer is formed in at least a portion below the bipolar transistor and a second insulator layer is formed in at least a portion below the MIS transistor, and the first insulator layer is formed at a depth deeper than that of the second insulator layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising:
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forming an intrinsic semiconductor layer of a first conduction type on a semiconductor substrate of the first conduction type, the intrinsic semiconductor layer having a lower impurity concentration than that of the semiconductor substrate;
forming a first semiconductor layer of a second conduction type on the intrinsic semiconductor layer;
forming a first impurity layer of the first conduction type in the first semiconductor layer of the second conduction type;
forming a bipolar transistor in a portion of the first semiconductor layer of the second conduction type, the bipolar transistor comprising a collector diffusion layer, a base diffusion layer, and an emitter diffusion layer; and
forming a MIS transistor in a portion of the first semiconductor layer of the second conduction type, the MIS transistor comprising a source diffusion layer and a drain diffusion layer, the laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer providing a diode for photoelectric conversion, wherein a first insulator layer is formed in at least a portion below the bipolar transistor and a second insulator layer is formed in at least a portion below the MIS transistor, and the first insulator layer is formed at a depth deeper than that of the second insulator layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification