Semiconductor device

• US 6,700,194 B2
• Filed: 03/29/2002
• Issued: 03/02/2004
• Est. Priority Date: 06/19/2001
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Chuma, Hideaki, Nakajima, Dai
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): GREENE, PERSHELLE L
• Application Number:
  US10/108,463
• Publication Number:
  US 20020190374A1
• Time in Patent Office: 704 Days
• Field of Search: 257/787, 257/784, 257/796, 257/690, 257/701, 257/706, 257/707
• US Class Current: 257/707
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01084 : Polonium [Po]
• CPC Class Codes: H01L 2924/01093 : Neptunium [Np]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A semiconductor device which satisfies both the requirements for radiation performance and for miniaturization while having a semiconductor element for a heavy current. The semiconductor device has an IGBT element (1) and diode element (2) which are provided on the main surface of the heat spreader (25) in a strip form formed of a metal with excellent heat conductivity and electricity conductivity. In addition, a relay terminal block (20) is provided outside of the IGBT element (1) on the main surface of the heat spreader (25) and the relay terminal block (20), the IGBT element (1) and the diode element (2) are aligned. Then, the external connection electrode plates (81) and (82) are, respectively, provided on both sides of this alignment. The heat spreader (25), the IGBT element (1), the diode element (2), the relay terminal block (20) and the external connection electrode plate (8) are sealed in a resin of a box shape by using transfer molding and the resin package (23) defines the external form of the semiconductor device (M100).

Claims

1. A semiconductor device comprising:

a radiation substrate;

semiconductor elements provided on said radiation substrate;

a plurality of main electrode plates;

a resin package configured to seal said radiation substrate, said semiconductor elements, and said plurality of main electrode plates in a resin;

a first main electrode plate of said plurality of main electrode plates having one end electrically connected to a main electrode of the semiconductor elements and having another end exposed to an outside of an upper surface of said resin package; and

a second main electrode plate of said plurality of main electrode plates having one end electrically connected to said radiation substrate and having another end exposed to said outside of the upper surface of said resin package,

wherein said resin package is integrally formed by a molding technique.

2. The semiconductor device according to claim 1, wherein

said resin package is in a box shape; and

a main surface of said other end of each of said plurality of main electrode plates alone is exposed on the upper surface of said resin package.

3. The semiconductor device according to claim 2, wherein the exposure position of said main surface of said other end of each of said plurality of main electrode plates is a position near a center of the upper surface of said resign package.

4. The semiconductor device according to claim 1, wherein

said resin package has a body part in a box shape and a plurality of protruding electrode parts which, respectively, protrude from the upper surface of the body part and contain said plurality of main electrode plates within the inside;

and

said main surface of said other end of each of said plurality of main electrode plates alone is exposed on the upper surface of each of said plurality of protruding electrode parts.

5. The semiconductor device according to claim 4, wherein

said plurality of protruding electrode parts are formed so that the bordering parts between said plurality of protruding electrode parts and said body part have curved surfaces.

6. The semiconductor device according to claim 4, wherein

said plurality of protruding electrode parts are provided at peripheral parts of said body part and have cavities inside thereof;

and

said other end of each of said plurality of main electrode plates is provided so as to cover the upper of each of said cavities.

7. The semiconductor device according to claim 6, wherein

said other end of each of said plurality of main electrode plates has a through hole;

and

said through hole has a thread around the inner surface thereof.

8. The semiconductor device according to claim 7, wherein

said through hole is created by means of a burring process;

and

said thread is provided on a burring part which protrudes to the side of said cavity by means of said burring process.

9. The semiconductor device according to claim 6, wherein

said other end of each of said plurality of main electrode plates has a through hole;

and

said plurality of protruding electrode parts further have nuts buried therein so that the thread of each of the nuts are connected to that of said through hole.

10. The semiconductor device according to claim 1, further comprising

a control circuit which is provided on said radiation substrate and which carries out a driving control of said semiconductor elements.

11. The semiconductor device according to claim 10, wherein said control circuit is covered with a resin of which the viscosity is smaller than that of the mold resin of said resin package.

12. The semiconductor device according to claim 1, wherein

a bottom surface of said radiation substrate, that is the opposite side of the surface on which said semiconductor elements are mounted, is exposed from the bottom surface of said resin package;

and

said semiconductor device further comprises an insulating layer provided on the side of said bottom surface of said resin package so as to, at least, completely cover said bottom surface of said radiation substrate.

13. The semiconductor device according to claim 12, wherein said insulating layer is formed of an insulating material in a sheet form attached to the bottom surface of said resin package.

14. The semiconductor device according to claim 12, wherein

said bottom surface of said resin package has a step region which is recessed and corresponds to the exposure region of said bottom surface of said radiation substrate;

the depth of said step region is lower than the thickness of said insulating layer.

15. The semiconductor device according to claim 12, wherein

said bottom surface of said resin package has a plurality of protruding parts which are provided so as to surround the exposure region of said bottom surface of said radiation substrate;

the height of said a plurality of protruding parts is lower than the thickness of said insulating layer.

16. The semiconductor device according to claim 12, further comprising

a radiation plate which closely contacts on said insulating layer and of which the area is broader than that of said insulating layer.

17. A semiconductor device comprising:

a plurality of radiation substrates;

semiconductor elements respectively provided on said plurality of radiation substrates;

a plurality of main electrode plates of which one end is electrically connected to a main electrode of each of said semiconductor elements, respectively; and

a resin package for sealing said plurality of radiation substrates, said semiconductor elements and said plurality of main electrode plates in a resin,

wherein the other end of each of said plurality of main electrode plates is exposed to the outside of the upper surface of said resin package; and

wherein said resin package is integrally formed by means of molding.

18. The semiconductor device according to claim 17, wherein all of said plurality of radiation substrates have a same rectangular shape and are arranged so that the long sides thereof are parallel to each other.