Method of controlling plasma etch process

• US 6,703,250 B2
• Filed: 02/14/2002
• Issued: 03/09/2004
• Est. Priority Date: 02/14/2002
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chiu, Hsien-Kuang
• Primary Examiner(s): Vigushin, John B.
• Assistant Examiner(s): KILDAY, LISA A
• Application Number:
  US10/076,665
• Publication Number:
  US 20030153102A1
• Time in Patent Office: 754 Days
• Field of Search: 438/5, 438/7-9, 438/14, 438/16, 216/58-61
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A method for automated monitoring and controlling of a semiconductor wafer plasma etching process including collecting data versus time during a plasma etching process the data including information representative of a concentration of at least one pair of reactant and product species present during the course of the plasma etching process; calculating a selected ratio of at least one reactant species and one product species at selected time intervals in the plasma etching process to create real-time concentration ratio data; retrieving model concentration ratio data for the at least one reactant species and one product species for comparison with the real-time concentration ratio data; comparing the model concentration ratio data with the real-time concentration ratio data to determine a difference; and, adjusting at least one plasma process operating parameter to minimize the difference.

Claims

1. A method for automated monitoring and controlling of a semiconductor wafer plasma etching process comprising the steps of:

collecting data versus time according to at least one of optical emission spectroscopy and mass spectroscopy during a plasma etching process said data representative of a concentration of at least one reactant and one product species present during the course of the plasma etching process;

calculating a concentration ratio comprising the at least one reactant species and one product species at selected time intervals during the plasma etching process to create real-time concentration ratio data;

retrieving model concentration ratio data determined according to a model etching process for the at least one reactant species and one product species;

comparing the model concentration ratio data with the real-time concentration ratio data; and

,

adjusting in-situ at least one plasma process operating parameter in response to the real-time concentration ratio to approach the model reactant-product concentration ratio.

2. The method of claim 1, wherein the model concentration ratio data is generated by applying a correction factor according to a ratio of masked to unmasked etching area exposed to the plasma etching process.

3. The method of claim 1, wherein the step of adjusting includes selectively adjusting the at least one plasma process operating parameter selected from the group consisting of etching time, excitation power, gas flow rate, pressure, semiconductor wafer temperature, and semiconductor wafer bias.

4. The method of claim 1, wherein the plasma etching process comprises etching semiconductor features including at least one of shallow trench isolation features, vias, and trench lines.

5. The method of claim 1, wherein the plasma etching process comprises etching materials selected from the group consisting of silicon oxides, metal nitrides, silicon, metals, and organic polymers.

6. The method of claim 1, wherein the step of adjusting further includes multi-variant analysis.

12. The method of claim 1, wherein the step of comparing comprises determining a concentration ratio difference between the model reactant-product concentration ratio data and the real-time reactant-product concentration ratio data.

13. The method of claim 12, wherein the step of adjusting comprises adjusting to minimize the concentration ratio difference.

14. The method of claim 1, wherein the etching process comprises etching a silicon substrate.

15. The method of claim 14, wherein an etching chemistry comprises Cl₂, HBr, and O₂.

16. The method of claim 15, wherein the reactant comprises Cl and the product comprises SiCl.

17. The method of claim 1, wherein the concentration ratio data and model concentration ratio data are selected from the group consisting of a reactant-product ratio and a product-reactant ratio.

7. A method for automated monitoring and controlling of a semiconductor wafer plasma etching process independently of an etching pattern density comprising the steps of:

determining concentration versus time during a plasma etching process of at least one reactant and one product species present during the plasma etching process according to at least one of optical emission spectroscopy and mass spectroscopy;

calculating a concentration ratio selected from the group consisting of a reactant-product ratio and product-reactant ratio of the at least one reactant species and one product species at selected time intervals during the plasma etching process to determine real-time concentration ratio data;

retrieving model concentration ratio data comprising the at least one reactant species and one product species to determine a desired concentration ratio;

comparing the model concentration ratio data with the real-time concentration ratio data to determine a desired concentration ratio; and

,

selectively adjusting at least one plasma process operating parameter in-situ to approach the desired concentration ratio.

8. The method of claim 7, wherein the desired concentration ratio data is determined with respect to a ratio of masked to unmasked etching area exposed to the plasma etching process.

9. The method of claim 7, wherein the step of selectively adjusting includes adjusting a plasma operating parameter selected from the group consisting of an etching time, excitation power, gas flow rate, pressure, semiconductor wafer temperature, and semiconductor wafer bias.

10. The method of claim 7, wherein the plasma etching process comprises etching semiconductor features selected from the group consisting of shallow trench isolation features, vias, and trench lines.

11. The method of claim 7, wherein the plasma etching process comprises etching materials selected from the group consisting of silicon oxide containing materials, metal nitride containing materials, silicon containing materials, metal containing materials, and organic polymer containing materials.