Memory structure and method making

• US 6,703,652 B2
• Filed: 01/16/2002
• Issued: 03/09/2004
• Est. Priority Date: 01/16/2002
• Status: Expired due to Fees

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Van Brocklin, Andrew L, Fricke, Peter
• Primary Examiner(s): Kielin, Erik J.
• Assistant Examiner(s): Dolan, Jennifer M
• Application Number:
  US10/051,677
• Publication Number:
  US 20030132458A1
• Time in Patent Office: 783 Days
• Field of Search: 257/50, 257/209, 257/278, 257/529, 257/530, 438/131, 438/132, 438/467, 438/600, 365/96, 365/100, 365/225.7
• US Class Current: 257/209
• CPC Class Codes: H10B 20/25 One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Abstract

A memory structure has a plurality of row conductors intersecting a plurality of column conductors at a plurality of intersections. Each intersection includes an electrically linear resistive element in series with a voltage breakdown element.

Claims

1. A memory structure comprising a plurality of row conductors intersecting a plurality of column conductors at a plurality of intersections, each said intersection including an electrically linear resistive element in series with a voltage breakdown element, wherein the voltage breakdown element includes an unpatterned antifuse.

2. The memory structure as defined in claim 1, wherein the electrically linear resistive element is selected from the group consisting of intrinsic silicon, lightly doped microcrystalline silicon, lightly doped amorphous silicon, refractory metal silicide nitride, and tungsten silicide nitride.

3. The memory structure as defined in claim 1, wherein the electrically linear resistive element has an electrical characteristic that, for linear changes in voltage, has a linear change in current.

4. The memory structure as defined in claim 1, wherein the plurality of rows and the plurality of column form a memory device selected from the group consisting of a write-once-read-many (WORM) memory device and a one time programmable memory device.

5. The memory structure as defined in claim 4, wherein the memory device is in a digital film for use in a digital camera.

6. The memory structure as defined in claim 4, wherein the memory device is in a memory card.

7. The memory structure as defined in claim 1, wherein the electrically linear resistive element comprises intrinsic silicon and the voltage breakdown element comprises an antifuse having a dielectric with a thickness not greater than about 200 Angstroms.

8. An apparatus including the memory structure as defined in claim 1, wherein the apparatus is selected from the group consisting of a digital camera, a hand held scanner, a desk top scanner, a fax machine, a copier, a multifunction peripheral (MFP), and a digital network copier.

9. A memory structure comprising a plurality of row conductors intersecting a plurality of column conductors at a plurality of intersections, each said intersection including an electrically linear resistive element in series with a voltage breakdown element, wherein:

each of the row and column conductors are patterned; and

the electrically linear resistive element is patterned; and

the voltage breakdown element is not patterned.

10. A memory structure comprising a primary plurality of memory elements each including a row conductor connected to a column conductor by an electrically linear resistive element in series with a voltage breakdown element that is not patterned.

11. The memory structure as defined in claim 10, wherein the electrically linear resistive element is selected from the group consisting of lightly doped microcrystalline silicon, lightly doped amorphous silicon, intrinsic silicon, refractory metal silicide nitride, and tungsten silicide nitride.

12. The memory structure as defined in claim 10, wherein the electrically linear resistive element is selected from the group consisting of an electrical device having an electrical characteristic that, for linear changes in voltage, has a linear change in current.

13. The memory structure as defined in claim 10, wherein the voltage breakdown element is an antifuse that includes a dielectric having a thickness not greater than about 200 Angstroms.

14. The memory structure as defined in claim 10, wherein:

each said electrically linear resistive element is selected from the group consisting of lightly doped microcrystalline silicon, lightly doped amorphous silicon, intrinsic silicon, refractory metal silicide nitride; and

each said voltage breakdown element comprises an antifuse having a dielectric with a thickness not greater than 200 Angstroms.

15. The memory structure as defined in claim 10, wherein:

each said row conductor and each said column conductor comprises patterned aluminum or an alloy thereof;

the electrically linear resistive element comprises patterned intrinsic silicon; and

the voltage breakdown element comprises unpatterned aluminum oxide having a thickness not greater than about 200 Angstroms.

16. The memory structure as defined in claim 10, further comprising:

a secondary electrical insulator upon and over the said primary plurality of memory elements;

a secondary plurality of said memory elements stacked over said primary plurality of memory elements and on the secondary electrical insulator;

a third electrical insulator upon and under the said primary plurality of memory elements; and

a third plurality of said memory elements stacked under said primary plurality of memory elements and on the third electrical insulator.

17. The memory structure as defined in claim 10, further comprising:

a secondary plurality of memory elements each including one said column conductor of said primary plurality of memory element connected to a row conductor by an electrically linear resistive element in series with a voltage breakdown element;

a third plurality of memory elements each including one said row conductor of said primary plurality of memory element connected to a column conductor by an electrically linear resistive element in series with a voltage breakdown element.

18. The memory structure as defined in claim 17, wherein for each of the second and third plurality of memory elements:

each said row and column conductor comprises patterned aluminum or an alloy thereof;

the electrically linear resistive element comprises patterned intrinsic silicon; and

the voltage breakdown element comprises unpatterned aluminum oxide having a thickness not greater than about 200 Angstroms.

19. An apparatus including the memory structure as defined in claim 10, wherein the apparatus is selected from the group consisting of a computing device, a multifunction peripheral, a cellular telephone, a personal digital assistant, a facsimile machine, a desk top scanner, a high volume copier, a music playing device, a video playing device, and a portable or fixed electronic apparatus utilizing the memory structure for permanent or removable memory media.

20. A memory structure comprising a plurality of adjacent pairs of row conductors each having there between:

an electrically linear resistive material;

a voltage breakdown material; and

a column conductor;

wherein the voltage breakdown material is a layer of unpatterned material between each said pair of adjacent row conductors.

21. The memory structure as defined in claim 20, wherein each said pair of adjacent row conductors also has an electrical insulator there between.

22. The memory structure as defined in claim 20, wherein:

the electrically linear resistive material is selected from the group consisting of lightly doped microcrystalline silicon, lightly doped amorphous silicon, intrinsic silicon, refractory metal silicide nitride; and

the voltage breakdown material comprises an antifuse having a dielectric with a thickness not greater than 200 Angstroms.

23. A memory structure comprising a plurality of adjacent pairs of patterned row conductors each having there between a voltage breakdown element sandwiched between a column conductor and an electrically linear resistive element in series with the voltage breakdown wherein:

a layer of unpatterned material is between each said pair of adjacent row conductors; and

the layer of unpatterned material is the voltage breakdown element.

24. The memory structure as defined in claim 23, wherein each said pair of adjacent row conductors also has an electrical insulator there between.

25. The memory structure as defined in claim 23, wherein:

the electrically linear resistive element is selected from the group consisting of lightly doped microcrystalline silicon, lightly doped amorphous silicon, intrinsic silicon, refractory metal silicide nitride; and

the voltage breakdown element comprises an antifuse having a dielectric with a thickness not greater than 200 Angstroms.

26. A memory structure comprising a plurality of means for storing data;

wherein;

each said means for storing data includes a row conductor connected to a column conductor by;

means for providing electrically linear resistance; and

means for programming the means for storing data;

the means for providing electrically linear resistance is in series with the means for programming the means for storing data, wherein the means for programming is not patterned.

27. The memory structure as defined in claim 26, wherein the means for programming the memory element is a voltage breakdown element.

28. The memory structure as defined in claim 27, wherein:

the voltage breakdown element comprises an antifuse;

each of the row and column conductors is patterned;

the electrically linear resistive element is patterned; and

the voltage breakdown element is not patterned.

29. A memory storage device comprising:

a substrate; and

a plurality of memory elements on the substrate, wherein;

each said memory element is included in a memory apparatus selected from the group consisting of a WORM memory device and a one time programmable memory device and includes;

a row conductor connected to a column conductor by an electrically linear resistive element in series with a voltage breakdown element that is not patterned.

30. The memory storage device as defined in claim 29, wherein the memory apparatus is in a data storage device selected from the group consisting of a memory card and a digital film for use in a digital camera.