Semiconductor device having radiation structure

• US 6,703,707 B1
• Filed: 11/22/2000
• Issued: 03/09/2004
• Est. Priority Date: 11/24/1999
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Kajimoto, Kazuo, Fukuda, Yutaka, Mamitsu, Kuniaki, Miyajima, Takeshi, Nomura, Kazuhito, Makino, Tomoatsu, Nakase, Yoshimi, Hirai, Yasuyoshi
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US09/717,227
• Time in Patent Office: 1,203 Days
• Field of Search: 257/718, 257/712, 257/713, 257/719, 257/720
• US Class Current: 257/718
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29116 Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/29386 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33 of a plurality of layer connectors
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/40137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/40225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 : the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 23/051 : another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/4006 : with bolts or screws
• CPC Class Codes: H01L 23/4334 : Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/0101 : Neon [Ne]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01084 : Polonium [Po]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.

Claims

1. A semiconductor device comprising:

a semiconductor chip;

first and second radiation members thermally and electrically connected to the semiconductor chip interposed therebetween, and having a radiation surface for radiation heat from the semiconductor chip; and

first and second bonding members respectively interposed between the first radiation member and the semiconductor chip and between the semiconductor chip and the second radiation member, wherein;

the first and second radiation members are made of a metallic material that is superior to tungsten and molybdenum in at least one of an electrical conductivity and a thermal conductivity.

2. The semiconductor device according to claim 1, further comprising an insulating film provided on a surface of one of the first and second radiation members at a side of the semiconductor chip, at a region other than a region where the one of the first and second radiation members are bonded to the semiconductor chip through one of the first and second bonding members.

3. The semiconductor device according to claim 2, wherein:

the semiconductor chip has a guard ring at an edge portion thereof, the guard ring facing the insulating film provided on the one of the first and second radiation members; and

the insulating film has an opening facing an inner portion of the semiconductor chip.

4. The semiconductor device according to claim 1, wherein the radiation surface is composed of first and second radiation surfaces that are respectively side faces of the first and second radiation members, and are coplanar with each other.

5. The semiconductor device according to claim 1, further comprising a conductive member protruding from a surface of one of the first and second radiation members other than the radiation surface, for electrically connecting the semiconductor chip to an outside.

6. The semiconductor device according to claim 5, further comprising another conductive member protruding from a surface of an other of the first and second radiation members for electrically connecting the semiconductor chip to an outside, wherein the conductive members respectively protrude in parallel with each other from a first position of the first radiation member and a second position of the second radiation member, wherein an axis passing through the first and second positions is perpendicular to the radiation surface.

7. The semiconductor device according to claim 1, wherein the first and second radiation members respectively have first and second radiation surfaces each of which is provided at an opposite side of the semiconductor chip, and exposed to an outside for radiating heat.

8. The semiconductor device according to claim 7, further comprising an outside wiring member disposed on the first radiation surface, wherein:

the first radiation member has a screw hole opened on the first radiation surface and having a closed bottom;

the outside wiring member has a through hole at a position corresponding to the screw hole; and

a screw is inserted into the through hole and the screw hole to fix the outside wiring member to the first radiation member.

9. The semiconductor device according to claim 1, wherein each of the first and second radiation members has a space at an inside thereof for reducing rigidity thereof.

10. The semiconductor device according to claim 1, wherein the metallic material contains one of copper and aluminum as a main component.

11. The semiconductor device according to claim 1, wherein the semiconductor chip and the first and second radiation members are sealed with a resin having a thermal expansion coefficient approximate to that of the first and second radiation members.

12. The semiconductor device according to claim 1, wherein:

each of the first and second bonding members is composed of a plurality of bumps that form a plurality of spaces therebetween; and

the plurality of spaces provided among the plurality of bumps are filled with a resin.

13. The semiconductor device according to claim 1, wherein each of the first and second radiation members has a metallic portion at least as a part of a portion thereof facing the semiconductor chip, the metallic portion having a thermal expansion coefficient approximate to that of the semiconductor chip.

14. A semiconductor device, comprising:

first and second semiconductor chips; and

first and second radiation members thermally and electrically connected to the first and second semiconductor chips interposed therebetween through a bonding member, and having a radiation surface for radiation radiating heat from the first and second semiconductor chips, wherein;

the first radiation member has first and second protruding portions protruding toward the first and second semiconductor chips; and

first and second front end portions of the first and second protruding portions are thermally and electrically connected to the first and second semiconductor chips through the bonding member.

15. The semiconductor device according to claim 14, wherein the radiation surface is composed of first and second radiation surfaces of the first and second radiation members, the first and second radiation surfaces being respectively provided at an opposite side of the first and second semiconductor chips and being approximately parallel to each other.

16. The semiconductor device according to claim 14, wherein the radiation surface is composed of first and second radiation surfaces that are side faces of the first and second radiation members, and are approximately coplanar with each other.

17. The semiconductor device according to claim 14, further comprising an insulating film provided on one of the first and second radiation members at a side facing the first and second semiconductor chips, and at a portion other than portions connected to the first and second semiconductor chips through the bonding member.

18. The semiconductor device according to claim 14, further comprising a conductive member protruding from a surface of one of the first and second radiation members other than the radiation surface, for electrically connecting at least one of the first and second semiconductor chips to an outside.

19. The semiconductor device according to claim 18, further comprising another conductive member protruding from a surface of an other of the first and second radiation members for electrically connecting the semiconductor chip to an outside, wherein the conductive members respectively protrude in parallel with each other from a first position of the first radiation member and a second position of the second radiation member, wherein an axis passing through the first and second positions is perpendicular to the radiation surface.

20. The semiconductor device according to claim 14, further comprising an outside wiring member disposed on the radiation surface that is provided on a surface of one of the first and second radiation members at an opposite side of the first and second semiconductor chips, wherein:

the one of the first and second radiation members has a screw hole opened on the radiation surface and having a closed bottom;

the outside wiring member has a through hole at a position corresponding to the screw hole; and

a screw is inserted into the through hole and the screw hole to fix the outside wiring member to the one of the first and second radiation members.

21. The semiconductor device according to claim 14, wherein each of the first and second radiation members has a space at an inside thereof for reducing rigidity thereof.

22. The semiconductor device according to claim 14, wherein at least one of the first and second radiation members is made of a metallic material containing one of copper and aluminum as a main component.

23. The semiconductor device according to claim 14, wherein the first and second semiconductor chips and the first and second radiation members are sealed with a resin having a thermal expansion coefficient approximate to that of the first and second radiation members.

24. The semiconductor device according to claim 14, wherein:

the bonding member is composed of a plurality of bumps that form a plurality of spaces therebetween; and

the plurality of spaces provided among the plurality of bumps are filled with a resin.

25. A semiconductor device, comprising:

a semiconductor chip having an element formation surface and a back surface;

a first conductive member bonded to the element formation surface of the semiconductor chip through a first bonding member having electrical conductivity;

a second conductive member bonded to the back surface of the semiconductor chip through a second bonding member having electrical conductivity; and

a third conductive member bonded to the first conductive member through a third bonding member having electrical conductivity, at an opposite side of the semiconductor chip,

wherein a bonding area between the first conductive member and the third conductive member is smaller than that between the first conductive member and the semiconductor chip.

26. The semiconductor chip according to claim 25, wherein the semiconductor chip, the first, second, and third conductive members are sealed with a sealing member to expose at least a surface part of one of the second and third conductive members from the sealing member.

27. The semiconductor device according to claim 26, wherein the first conductive member has a step portion facing an outer periphery of the resin, the step portion forming a thin thickness portion of the first conductive member.

28. The semiconductor device according to claim 27, wherein the step portion of the first conductive member is covered with the sealing member.

29. The semiconductor device according to claim 27, wherein the first conducive conductive member partially protrudes toward the third conductive member with the thin thickness portion facing the semiconductor chip.

30. The semiconductor device according to claim 26, wherein an outer surface portion of the first conductive member contacting the sealing member is oxidized.

31. The semiconductor device according to claim 25, further comprising an electrode provided on the element formation surface of the semiconductor chip, wherein:

an area of the electrode is approximately equal to the bonding area between the first conductive member and the semiconductor chip.

32. A semiconductor device, comprising:

a semiconductor chip having an element formation surface and a back surface at an opposite side of the element formation surface;

a first conductive member electrically connected to the element formation surface of the semiconductor chip;

a second conductive member electrically connected to the back surface of the semiconductor;

a third conductive member electrically connected to the first conductive member at an opposite side of the semiconductor chip; and

a sealing member sealing the element formation surface and the back surface of the semiconductor chip respectively electrically connected to the first and second conductive members, and a face of the third conductive member electrically connected to the first conductive member, wherein;

the first conductive member has a step portion at a portion facing an outer periphery of the sealing member, the first conductive member having a thin thickness portion by providing the step portion.

33. The semiconductor device according to claim 32, wherein the step portion of the first conductive member is covered with the sealing member.

34. The semiconductor device according to claim 32, wherein the first conductive member partially protrudes toward the third conductive member with the thin thickness portion facing the semiconductor chip.

35. The semiconductor device according to claim 32, wherein an outer surface portion of the first conductive member contacting the sealing member is oxidized.

36. The semiconductor device according to claim 32, further comprising an electrode provided on the element formation surface of the semiconductor chip, wherein:

an area of the electrode is approximately equal to a bonding area between the first conductive member and the semiconductor chip.

37. A semiconductor device, comprising:

a substrate made of Si, having an element formation surface and a back surface at an opposite side of the element formation surface;

an electrode formed on the element formation surface of the substrate and made of pure Al excluding an impurity; and

a barrier metal disposed between the electrode and the substrate, for preventing Si from being dissolved in the electrode.

38. The semiconductor device according to claim 37, further comprising a back side electrode formed on the back surface of the substrate and made of pure Al excluding an impurity.

39. The semiconductor device according to claim 37, further comprising a first radiation member bonded to the main surface of the substrate through the electrode to radiate heat generated from a semiconductor chip composed of the substrate and the electrode.

40. The semiconductor device according to claim 39, wherein a direction in which the heat is radiated by the first radiation member corresponds to a direction progressing from the element formation surface to the back surface of the substrate.

41. The semiconductor device according to claim 39, further comprising:

a second radiation member bonded to the back surface of the substrate, and having a radiation surface; and

an outside cooling member contacting the radiation surface of the second radiation member at an opposite side of the substrate for facilitating radiation of the heat to an outside, wherein;

the first radiation member is connected to the second radiation member so that the heat generated from the element formation surface is radiated from the radiation surface of the second radiation member.

42. The semiconductor device according to claim 41, further comprising a high thermal conductivity substrate having high thermal conductivity and disposed between the first radiation member and the second radiation member.

43. A semiconductor device, comprising:

a semiconductor chip having a first surface and a second surface;

a first radiation member bonded to the first surface of the semiconductor chip through a first bonding member having thermal conductivity; and

a second radiation member bonded to the second surface of the semiconductor chip through a second bonding member having thermal conductivity,

the second radiation member having a concave portion for holding therein the semiconductor chip therein.

44. The semiconductor device according to claim 43, wherein:

the first radiation member has a convex portion protruding toward the semiconductor chip; and

the convex portion is bonded to the semiconductor chip through the first bonding member.

45. The semiconductor device according to claim 43, further comprising:

a control electrode provided on the first surface of the semiconductor chip; and

a lead frame electrically connected to the control electrode.

46. The semiconductor device according to claim 45, wherein one of the first radiation member and the second radiation member has a protruding portion at a side of the semiconductor chip, the protruding portion being inserted into a hole formed in the lead frame to fix the one of the first radiation member and the second radiation member to the lead frame.

47. The semiconductor device according to claim 45, wherein one of the first radiation member and the second radiation member has a protruding portion at a side of the semiconductor chip, the protruding portion being inserted into a hole formed in the lead frame with a spacer interposed between the lead frame and the one of the first radiation member and the second radiation member, the spacer positioning the one of the first radiation member and the second radiation member with respect to the semiconductor chip in a thickness direction of the semiconductor chip.

48. The semiconductor device according to claim 43, wherein one of the first radiation member and the second radiation member is composed of a copper member and a plurality of portions disposed partially inside the copper member and made of one of invar and molybdenum.

49. The semiconductor device according to claim 43, wherein the first radiation member, the semiconductor chip, and the second radiation member are sealed with a resin member in a state where each of the first radiation member and the second radiation member has a surface exposed from the resin member at an opposite side of the semiconductor chip.

50. A semiconductor device, comprising:

a semiconductor chip having a first surface and a second surface;

a first radiation member having a convex portion that is bonded to the first surface of the semiconductor chip through a first bonding member having thermal conductivity; and

a second radiation member bonded to the second surface of the semiconductor chip through a second bonding member having thermal conductivity;

a control electrode provided on the first surface of the semiconductor chip;

a lead frame electrically connected to the control electrode, wherein;

one of the first radiation member and the second radiation member has a protruding portion at a side facing the semiconductor chip;

the protruding portion is fixedly inserted into a hole formed in the lead frame to fix the one of the first radiation member and the second radiation member; and

a spacer is disposed in a space defined between the one of the first radiation member and the second radiation member to position the one of the first radiation member and the second radiation member, and the semiconductor chip in a thickness direction of the semiconductor chip.

51. The semiconductor device according to claim 50, wherein the first radiation member and the second radiation member are made of a metallic material having a linear thermal expansion coefficient approximate to that of the semiconductor chip.

52. The semiconductor device according to claim 50, wherein one of the first radiation member and the second radiation member is composed of a copper member and a plurality of portions disposed partially inside the copper member and made of one of invar and molybdenum.

53. The semiconductor device according to claim 50, wherein the first radiation member, the semiconductor chip, and the second radiation member are sealed with a resin member in a state where each of the first radiation member and the second radiation member has a surface exposed from the resin member at an opposite side of the semiconductor chip.

54. A semiconductor device, comprising:

a semiconductor chip having a first surface and a second surface;

a first conductive member bonded to the first surface of the semiconductor chip through a first soldering member; and

a second conductive member bonded to the second surface of the semiconductor chip through a second soldering member, a fusing point of which is lower than that of the first soldering member.

55. The semiconductor device according to claim 54, wherein the second soldering member contains Sn at 90 wt % at least.

56. The semiconductor device according to claim 54, wherein the second conductive member has a recess portion in which the second soldering member is disposed.

57. The semiconductor device according to claim 54, wherein each of the first radiation member and the second radiation member serves simultaneously as an electrode and a radiation member for the semiconductor chip.