Methods of fabricating silicon carbide crystals
First Claim
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1. A method of producing silicon carbide crystals, comprising:
- forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern by;
providing regions of higher thermal conductivity in a seed crystal holder, the regions of higher thermal conductivity corresponding to the predefined pattern;
mounting the seed crystal on the seed crystal holder; and
growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern.
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Abstract
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
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10 Claims
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1. A method of producing silicon carbide crystals, comprising:
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forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern by;
providing regions of higher thermal conductivity in a seed crystal holder, the regions of higher thermal conductivity corresponding to the predefined pattern;
mounting the seed crystal on the seed crystal holder; and
growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7)
removing protions of the seed crystal holder so as to provide cavities in the seed crystal holder; and
placing a material having a higher thermal conductivity than a material of the seed crystal holder in the cavities in the seed crystal holder.
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8. A method of producing silicon carbide crystals, comprising:
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forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern by;
providing regions of higher thermal conductivity in a seed crystal holder, the regions of higher thermal conductivity corresponding to the predefined pattern;
mounting the seed crystal on the seed crystal holder; and
growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern;
wherein the providing regions of higher thermal conductivity comprises;
removing portions of the seed crystal holder so as to provide cavities in the seed crystal holder; and
filling the cavities in the seed crystal holder with a material having a higher thermal conductivity than a material of the seed crystal holder. - View Dependent Claims (9, 10)
covering the seed crystal holder with a layer of the material having a higher thermal conductivity; and
removing a sufficient amount of the layer of the material of higher thermal conductivity so as to expose portions of the seed crystal holder.
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10. The method of claim 9, wherein the material of the seed crystal holder comprises graphite and wherein the material of higher thermal conductivity comprises silicon carbide.
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