Method for improving an electrodeposition process through use of a multi-electrode assembly
First Claim
1. A method for improving a electrodeposited metal film uniformity and preventing metal deposition and peeling of deposited metal from an electrode during an electrodeposition and electropolishing process comprising the steps of:
- providing a first anode electrode assembly and a semiconductor wafer plating surface disposed in an electrolyte bath comprising a plating metal for deposition onto the semiconductor wafer plating surface;
providing at least one additional anode electrode assembly comprising the plating metal disposed peripheral to the first anode electrode assembly for selectively applying the cathodic electrical potential during an electropolishing process; and
, periodically alternating between an electrodeposition process and electropolishing process with respect to the semiconductor wafer plating surface such that the plating metal is preferentially plated onto the at least one additional electrode assembly.
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Abstract
A method for improving an electrodeposited metal film uniformity and preventing metal deposition and peeling of deposited metal from an electrode during an electrodeposition and electropolishing process including providing a first anode electrode assembly and a semiconductor wafer plating surface disposed in an electrolyte bath including a plating metal for deposition onto the semiconductor wafer plating surface; providing at least one additional anode electrode assembly including the plating metal disposed peripheral to the first anode electrode assembly for selectively applying the cathodic electrical potential during an electropolishing process; and, periodically alternating between an electrodeposition process and electropolishing process with respect to the semiconductor wafer plating surface such that the plating metal is preferentially plated onto the at least one additional electrode assembly.
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Citations
16 Claims
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1. A method for improving a electrodeposited metal film uniformity and preventing metal deposition and peeling of deposited metal from an electrode during an electrodeposition and electropolishing process comprising the steps of:
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providing a first anode electrode assembly and a semiconductor wafer plating surface disposed in an electrolyte bath comprising a plating metal for deposition onto the semiconductor wafer plating surface;
providing at least one additional anode electrode assembly comprising the plating metal disposed peripheral to the first anode electrode assembly for selectively applying the cathodic electrical potential during an electropolishing process; and
,periodically alternating between an electrodeposition process and electropolishing process with respect to the semiconductor wafer plating surface such that the plating metal is preferentially plated onto the at least one additional electrode assembly. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for improving an electroplating film uniformity by reducing metal plating accumulation and peeling of plated metal from an electrode assembly during an electrodeposition and electropolishing process comprising the steps of:
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providing a first anode electrode assembly and a semiconductor wafer plating surface in contact with electrical contacts for applying a potential disposed in an electrolyte bath comprising a plating metal for deposition onto the semiconductor wafer plating surface;
providing at least one additional anode electrode assembly comprising the plating metal disposed peripheral to and surrounding the first anode electrode assembly for selectively applying a cathodic electrical potential during an electropolishing process; and
,periodically alternating between an electrodeposition process and electropolishing process with respect to the semiconductor wafer plating surface wherein the plating metal is preferentially plated onto the at least one additional electrode assembly.
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14. A method for improving a copper electroplating film uniformity by reducing copper plating accumulation and peeling of plated copper metal from an anodic electrode assembly during a copper electrodeposition and electropolishing process comprising the steps of:
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providing a first anode electrode assembly comprising copper disposed in an electrolyte bath comprising copper for copper deposition onto a semiconductor wafer plating surface;
providing at least one additional anode electrode assembly comprising copper disposed to surround to the first anode electrode assembly for selectively applying a cathodic electrical potential during an electropolishing process; and
,periodically reversing an electrolyte current flow to perform an electropolishing process with respect to the semiconductor wafer plating surface such that copper is preferentially plated onto the at least one additional electrode assembly. - View Dependent Claims (15, 16)
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Specification