Method for forming multiple structures in a semiconductor device
First Claim
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1. A method of forming a plurality of fins in a FinFET device, comprising:
- depositing a dielectric layer over a silicon on insulator (SOI) wafer, the SOI wafer comprising a conductive layer on an insulating layer;
forming a resist mask over portions of the dielectric layer;
etching a trench in a portion of the dielectric layer not covered by the resist mask, the trench having two side walls;
forming spacers adjacent the two sidewalls of the trench, the spacers comprising a conductive material and having a width ranging from about 100 Å
to about 500 Å
;
etching the dielectric layer to form dielectric structures located below the spacers, the dielectric structures having a width approximately equal to the width of the spacers;
etching the conductive layer to form the plurality of fins; and
removing the spacers and the dielectric structures.
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Abstract
A method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of the trench. The film may then be etched, followed by an of the conductive layer to form the structures.
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Citations
19 Claims
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1. A method of forming a plurality of fins in a FinFET device, comprising:
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depositing a dielectric layer over a silicon on insulator (SOI) wafer, the SOI wafer comprising a conductive layer on an insulating layer;
forming a resist mask over portions of the dielectric layer;
etching a trench in a portion of the dielectric layer not covered by the resist mask, the trench having two side walls;
forming spacers adjacent the two sidewalls of the trench, the spacers comprising a conductive material and having a width ranging from about 100 Å
to about 500 Å
;
etching the dielectric layer to form dielectric structures located below the spacers, the dielectric structures having a width approximately equal to the width of the spacers;
etching the conductive layer to form the plurality of fins; and
removing the spacers and the dielectric structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
depositing a photoresist material over the dielectric layer, and forming at least a first opening in the photoresist material, wherein the opening exposes the dielectric layer and a distance between at least two of the plurality of fins is defined in part by the width of the first opening.
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4. The method of claim 1, wherein the etching a trench comprises:
etching about 300 Å
to about 1000 Å
of the dielectric layer not covered by the resist mask.
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5. The method of claim 1, wherein the insulating layer comprises a buried oxide layer and the conductive layer comprises at least one of silicon and germanium.
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6. The method of claim 5, wherein the spacers comprise silicon.
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7. The method of claim 1, wherein the dielectric layer comprises a silicon oxide.
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8. The method of claim 1, wherein the plurality of fins consists of two fins.
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9. A method of manufacturing a semiconductor device, comprising:
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depositing a film over a conductive layer, the conductive layer being used to form a plurality of fin structures;
etching at least one trench in a portion of the film, a first one of the at least one trench having two side walls;
forming spacers adjacent the two sidewalls of the first trench, the spacers having a first width and comprising a conductive material;
etching the film, the etching terminating on the conductive layer with the spacers acting as a mask to prevent etching of portions of the film located below the spacers, the un-etched portions of the film forming a first plurality of structures approximately equal in width to the first width;
etching the conductive layer, the first plurality of structures acting as a mask to prevent portions of the conductive layer from being etched, the un-etched portions of the conductive layer forming the fin structures;
forming a source region and a drain region;
depositing a gate material over the fin structures; and
patterning and etching the gate material to form at least one gate electrode. - View Dependent Claims (10, 11, 12, 13, 14)
etching about 300 Å
to about 1000 Å
into a top surface of the film not covered by a resist mask.
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12. The method of claim 9, wherein the etching at least one trench comprises:
etching at least one trench having a predetermined width, wherein a pitch of at least two of the plurality of fin structures is based on the predetermined width.
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13. The method of claim 9, wherein the conductive layer is formed on a buried oxide layer that is formed on a semiconducting material, the conductive layer comprising at least one of silicon and germanium, the film comprising a silicon oxide and the spacers comprising silicon.
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14. The method of claim 9, wherein the at least one gate electrode comprises two gate electrodes, a first gate electrode being located on a first side of the plurality of fin structures and a second gate electrode being located on an opposite side of the plurality of fin structures.
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15. A method of forming a plurality of structures in a semiconductor device, comprising:
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depositing a film over a conductive layer;
etching at least one trench in a portion of the film;
forming conductive spacers along sidewalls of the at least one trench;
etching the film, the etching terminating on the conductive layer; and
etching the conductive layer to form the plurality of structures wherein the semiconductor device comprises a finFET device and the plurality of structures comprise fins. - View Dependent Claims (16, 17, 18, 19)
removing the spacers and the dielectric structures.
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17. The method of claim 15, wherein the plurality of structures comprises a plurality of fins and the at least one trench comprises two trenches, the two trenches being laterally separated by a predetermined distance and each of the two trenches having a predetermined width.
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18. The method of claim 17, wherein a distance between a first fin and a second fin is defined by the predetermined width.
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19. The method of claim 18, wherein a distance between the second fin and a third fin is defined by the predetermined distance.
Specification