Methods for forming capacitor structures; and methods for removal of organic materials

• US 6,706,632 B2
• Filed: 04/25/2002
• Issued: 03/16/2004
• Est. Priority Date: 04/25/2002
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sinha, Nishant
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Kennedy, Jennifer M.
• Application Number:
  US10/134,201
• Publication Number:
  US 20030203633A1
• Time in Patent Office: 691 Days
• Field of Search: 438/690-693, 438/253-256, 438/396-399, 438/3, 257/40, 257/296, 257/303, 257/306, 451/41
• US Class Current: 438/690
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug

Abstract

The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.

Claims

1. A method for forming a capacitor structure comprising:

providing a semiconductor substrate having a recess therein, the recess having a Periphery comprising a bottom and sidewalls;

forming a first conductive-material-comprising layer over the semiconductor substrate, the first conductive-material-comprising layer lining the bottom and the sidewalls to partially fill the recess and extending laterally outward from the partially filled recess over an upper surface of the semiconductor substrate;

filling the partially filled recess with an organic material, the filling forming an organic material layer over an upper surface of the first conductive-material-comprising layer;

removing at least a portion of the organic material layer with a chemical mechanical polishing pad and an organic-material-removing fluid, wherein the organic-material-removing fluid is substantially unreactive with the first conductive-material-comprising layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing;

stopping the removing when substantially all of an upper surface of the first conductive-material-comprising layer is exposed

forming a dielectric layer over the first conductive-material-comprising layer; and

forming a second conductive-material-comprising layer over the dielectric layer.

2. The method of claim 1 wherein the organic-material-removing fluid comprises about 0 weight percent particles at an initiation of the removing.

3. The method of claim 1 wherein the organic material comprises an organic polymer material selected from the group consisting of a photoresist material, a non-photosensitive photoresist composition and a polyimide material.

4. The method of claim 1 wherein the chemical mechanical polishing pad comprises a polyurethane material.

5. The method of claim 1 wherein the organic-material-removing fluid comprises water.

6. The method of claim 1 wherein the organic-material-removing fluid comprises one or both of ammonia and TMAH.

7. The method of claim 1 further comprising baking the organic material prior to the removing.

8. The method of claim 1 wherein the first conductive-material-comprising layer comprises platinum.

9. The method of claim 1 wherein the first conductive-material-comprising layer comprises tantalum.

10. The method of claim 1 wherein the first conductive-material-comprising layer comprises one or more of platinum, iridium, ruthenium, and tantalum.

11. The method of claim 1 wherein the first conductive-material-comprising layer comprises one or both of tantalum silicon nitride and tantalum nitride.

12. A method of forming a capacitor structures comprising:

forming a recess within a surface of a semiconductor substrate, the recess having a periphery comprising a bottom and sidewalls, and the surface having portions adjacent the recess;

depositing a first capacitor electrode layer over the bottom and sidewalls of the recess and over the portions adjacent the recess, the depositing forming a partially filled recess, wherein the first capacitor electrode layer formed over the portion adjacent the recess defines a lateral capacitor electrode layer;

filling the partially filled recess with an organic material, the organic material extending laterally outward from the filled recess and forming an organic material layer over the lateral capacitor electrode layer;

first selectively removing the organic material layer from over the lateral capacitor electrode layer with a chemical mechanical process utilizing a first liquid to thereby expose at least a portion of an upper surface of the lateral capacitor electrode, wherein the first liquid is substantially unreactive with the lateral capacitor electrode layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing;

second removing the lateral capacitor electrode layer with a second chemical mechanical process utilizing a second liquid, the second liquid having a different composition than the first liquid;

third removing the organic material from within the recess;

forming a dielectric region over the first capacitor electrode layer; and

forming a second capacitor electrode layer over the dielectric region.

13. The method of claim 12 wherein the first capacitor electrode layer comprises one or more of platinum, iridium, ruthenium, and tantalum.

14. The method of claim 12 wherein the organic material comprises a material selected from the group consisting of a photoresist material, a non-photosensitive photoresist composition and a polyimide material.

15. The method of claim 12 wherein the first chemical mechanical process comprises removing at least a portion of the organic material layer with a chemical mechanical pad and the first liquid.

16. The method of claim 12 wherein the second chemical mechanical process comprises removing at least a portion of the lateral capacitor electrode layer with a chemical mechanical pad and the second liquid.

17. A method for removing organic materials comprising:

providing a substrate having an organic-material-comprising layer thereon, the substrate having an upper surface; and

removing at least a portion of the organic-material-containing layer with a chemical mechanical pad and a fluid to thereby expose at least a portion of the upper surface of the substrate, wherein the fluid is substantially unreactive with the substrate and comprises a particulate concentration of less than or equal to about 0.1 weight percent at an initiation of the removing.

18. The method of claim 17 wherein the organic-material-comprising layer comprises a material selected from the group consisting of a photoresist material, a non-photosensitive resist composition and a polyimide material.

19. The method of claim 17 wherein a pH of the fluid is from about 8 to about 12.

20. The method of claim 17 wherein the fluid comprises one or both of ammonia and TMAH.

21. The method of claim 17 wherein the fluid comprises water.

22. The method of claim 17 wherein the surface of the substrate comprises a conductive material.

23. The method of claim 22 wherein the comprises one or more of platinum, iridium, ruthenium, and tantalum.

24. The method of claim 17 wherein the removing further comprises providing a monitoring apparatus for determining when the surface of the substrate is exposed.

25. The method of claim 24 wherein the monitoring apparatus comprises at least one or both of a torque monitoring apparatus and an optical monitoring apparatus.

26. The method of claim 17 wherein the chemical mechanical pad comprises a polyurethane material.

27. A method for removing materials during semiconductor processing comprising:

providing a substrate having at least two layers of material thereon, the first layer comprising and the second layer comprising an organic material;

wherein at least a portion of the second layer resides over the first layer;

first removing at least a portion of the second layer by a chemical mechanical process using a first fluid to thereby expose at least a portion of an upper surface of the first layer, the first fluid being substantially unreactive with the first layer and comprising a particulate concentration of less than or equal to about 0.1 weight percent at an initiation of the first removing; and

second removing at least a portion of the first layer by the chemical mechanical process using a second fluid, the second fluid having a different composition than the first fluid.

28. The method of claim 27 wherein the second layer comprises an organic polymer material selected from the group consisting of a photoresist material, a non-photosensitive photoresist composition and a polyimide material.

29. The method of claim 27 wherein the first fluid comprises water.

30. The method of claim 27 wherein the first fluid comprises one or both of ammonia and TMAH.

31. The method of claim 27 wherein the first layer comprises one or more of platinum, iridium ruthenium, and tantalum.

32. The method of claim 27 wherein the second fluid comprises a particulate concentration of less than or equal to approximately 0.1 weight percent at an initiation of the second removing.