Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece

• US 6,709,878 B2
• Filed: 05/16/2002
• Issued: 03/23/2004
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hembree, David R., Akram, Salman
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LUK, OLIVIA T
• Application Number:
  US10/042,707
• Publication Number:
  US 20030173635A1
• Time in Patent Office: 677 Days
• Field of Search: 438/14-16
• US Class Current: 438/14
• CPC Class Codes: G01K 1/026 arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15156 Side view

Abstract

The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

Claims

1. A method of sensing temperature of an electronic device workpiece comprising:

providing an electronic device workpiece;

forming a cavity in the electronic device workpiece comprising isotropically etching the electronic device workpiece;

providing a temperature sensing device within the cavity;

supporting the temperature sensing device using the electronic device workpiece;

providing an electrical interconnect upon a surface of the electronic device workpiece;

electrically coupling the electrical interconnect with the temperature sensing device; and

sensing temperature of the electronic device workpiece using the temperature sensing device.

2. The method according to claim 1 further comprising wire bonding the electrical interconnect and the temperature sensing device.

3. The method according to claim 1 further comprising forming the temperature sensing device.

4. The method according to claim 3 wherein the forming the temperature sensing device comprises forming a resistance temperature device.

5. The method according to claim 1 further comprising electrically coupling the electrical interconnect with external circuitry.

6. The method according to claim 1 further comprising electrically coupling the temperature sensing device with an edge of the electronic device workpiece using the electrical interconnect.

7. The method according to claim 1 wherein the providing the electrical interconnect comprises forming a conductive trace.

8. The method according to claim 1 further comprising contacting the electrical interconnect with the temperature sensing device.

9. The method according to claim 1 wherein the method comprises a method of sensing temperature of semiconductor wafers.