Schottky rectifier with insulation-filled trenches and method of forming the same
First Claim
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1. A semiconductor Schottky rectifier comprising:
- a semiconductor region;
insulation-filled trench in the semiconductor region;
strips of resistive material extending along the trench sidewalls, the strips of resistive material having a conductivity type opposite that of the semiconductor region; and
a conductor extending over and in contact with the semiconductor region so that the conductor and the underlying semiconductor region form a Schottky contact through which a substantial portion of a current flows when the Schottky rectifier is forward biased.
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Abstract
In accordance with an embodiment of the present invention, a semiconductor rectifier includes an insulation-filled trench formed in a semiconductor region. Strips of resistive material extend along the trench sidewalls. The strips of resistive material have a conductivity type opposite that of the semiconductor region. A conductor extends over and in contact with the semiconductor region so that the conductor and the underlying semiconductor region form a Schottky contact.
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Citations
14 Claims
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1. A semiconductor Schottky rectifier comprising:
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a semiconductor region;
insulation-filled trench in the semiconductor region;
strips of resistive material extending along the trench sidewalls, the strips of resistive material having a conductivity type opposite that of the semiconductor region; and
a conductor extending over and in contact with the semiconductor region so that the conductor and the underlying semiconductor region form a Schottky contact through which a substantial portion of a current flows when the Schottky rectifier is forward biased. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor rectifier comprising:
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a substrate;
a semiconductor region formed over the substrate, the substrate and the region having the same conductivity type. at least two insulation-filled trenches laterally spaced in the first semiconductor region to form a mesa region therebetween; and
strips of resistive material extending along the sidewalls of the at least two trenches but being discontinuous along the bottom of the at least two trenches, the strips of resistive material having a conductivity type opposite that of the semiconductor region; and
a conductor extending over and in contact with the semiconductor region so that the conductor and the underlying semiconductor region form a Schottky contact. - View Dependent Claims (11, 12, 13, 14)
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Specification