Method for adjusting and stabilizing the frequency of an acoustic resonator

• US 6,710,508 B2
• Filed: 11/27/2001
• Issued: 03/23/2004
• Est. Priority Date: 11/27/2001
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Wen, Joe Qingzhe, Ruby, Richard C.
• Primary Examiner(s): Budd, Mark
• Application Number:
  US09/996,951
• Publication Number:
  US 20030098631A1
• Time in Patent Office: 847 Days
• Field of Search: 310/312, 310/320, 310/322, 310/324, 310/334
• US Class Current: 310/312
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient

Abstract

In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.

Claims

1. A method of achieving a resonant frequency of acoustic resonators comprising:

fabricating a plurality of said acoustic resonators on a basis of forming each said acoustic resonator to include an electrode-piezoeletric stack in which layer dimensions are selected to achieve an intended operational resonant frequency, said intended operational resonant frequency being a target final operational resonant frequency, each said electrode-piezoelectric stack having conductive electrode layers;

determining whether said acoustic resonators have current resonant frequencies that are within an acceptable margin of error of said intended operational resonant frequency; and

for occasions in which said current resonant frequencies are outside of said acceptable margin of error, exposing said acoustic resonators to a controlled gaseous environment in which at least one said electrode layer is oxidized, including intentionally regulating said controlled gaseous environment on a basis of providing each said acoustic resonator with a final operational resonant frequency that is within said margin of error of said intended operational resonant frequency;

wherein said exposing includes regulating said temperature and oxygen content to provide a downward adjustment of said resonant frequencies in a controlled manner, said exposing further including controlling flow rates of gases, including oxygen.

2. The method of claim 1 wherein said exposing includes controlling said temperature and controlling said oxygen content within said controlled gaseous environment based on establishing said final operational resonant frequencies within said margin of error of said intended operational resonant frequency.

3. The method of claim 1 wherein said exposing occurs at a temperature not exceeding 215°

C.

4. A method of achieving a resonant frequency of acoustic resonators comprising:

fabricating a plurality of said acoustic resonators on a basis of forming each said acoustic resonator to include an electrode-piezoelectric stack in which layer dimensions are selected to achieve an intended operational resonant frequency, said intended operational resonant frequency being a target final operational resonant frequency, each said electrode-piezoelectric stack having conductive electrode layers;

determining whether said acoustic resonators have current resonant frequencies that are within an acceptable margin of error of said intended operational resonant frequency; and

for occasions in which said current resonant frequencies are outside of said acceptable margin of error, exposing said acoustic resonators to a controlled gaseous environment in which at least one said electrode layer is oxidized, including intentionally regulating said controlled gaseous environment on a basis of providing each said acoustic resonator with a final operational resonant frequency that is within said margin of error of said intended operational resonant frequency;

wherein said exposing includes regulating said temperature and oxygen content to provide a downward adjustment of said resonant frequencies in a controlled manner, said exposing further including controlling flow rates of gases, including oxygen, said exposing occurring in a Rapid Thermal Annealer (RTA).

5. The method of claim 4 wherein said exposing includes controlling said temperature and controlling said oxygen content within said controlled gaseous environment based on establishing said final operational resonant frequencies within said margin of error of said intended operational resonant frequency.