Nitride semiconductor laser and method of fabricating the same

• US 6,711,192 B1
• Filed: 05/09/2000
• Issued: 03/23/2004
• Est. Priority Date: 05/10/1999
• Status: Expired due to Fees

• Current Assignee: Pioneer Corporation
• Original Assignee: Pioneer Corporation
• Inventors: Tanaka, Toshiyuki, Ota, Hiroyuki, Chikuma, Kiyofumi
• Primary Examiner(s): Ip, Paul
• Assistant Examiner(s): MENEFEE, JAMES A
• Application Number:
  US09/567,024
• Time in Patent Office: 1,414 Days
• Field of Search: 372/43-45, 372/36
• US Class Current: 372/43.01
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (Al_xGa_1−x)_1−YIn_yN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Al_x′Ga_1−x′)_1−y′In_y′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

Claims

1. A nitride semiconductor laser device comprising:

a ground layer made of group III nitride semiconductor (Al_x′

Ga<sub>1−

x′</sub>

)<sub>1−

y′</sub>

In_y′

N (0≦

x′

≦

1, 0≦

y′

≦

1);

a laser body including a plurality of crystal layers each made of group III nitride semiconductor (Al_xGa<sub>1−

x</sub>)<sub>1−

y</sub>In_yN (0≦

x≦

1, 0≦

y≦

1) successively grown on the ground layer, the laser body further including a narrowed current path to provide electric current to a light emitting portion of the crystal layers;

a cleavable support substrate bonded after growth of the crystal layers onto a surface of the laser body where the narrowed current path is disposed, wherein the cleavable support substrate has a cleavage plane coinciding with a cleavage plane of the crystal layers of the nitride semiconductor and wherein the cleavable support substrate is made of an electrically conductive material; and

at least one bonding film, via which the cleavable support substrate and the laser body are bonded, including a portion of the narrowed current.

2. A nitride semiconductor laser device according to claim 1, wherein the device further comprises a heat sink bonded onto the ground layer.

3. A nitride semiconductor laser device according to claim 1, wherein the device further comprises a heat sink bonded onto the cleavable support substrate.

4. A nitride semiconductor laser device according to claim 1, wherein the device further comprises a waveguide extending along a direction normal to a cleavage plane of the nitride semiconductor.

5. A nitride semiconductor laser device according to claim 1, wherein the cleavable support substrate is made of a semiconductor single-crystal material.

6. A nitride semiconductor laser device according to claim 5, wherein the semiconductor single-crystal material is selected from a group consisting of GaAs, InP and Si.

7. A nitride semiconductor laser according to claim 1, wherein the narrowed current path includes a conductive stripe extending along a direction normal to the cleavage plane of the nitride semiconductor.

8. A nitride semiconductor laser device according to claim 1, wherein the bonding film comprising a metal film.