Chamber having process monitoring window

• US 6,712,927 B1
• Filed: 07/05/2000
• Issued: 03/30/2004
• Est. Priority Date: 06/11/1998
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Qian, Xue-Yu, Grimbergen, Michael N.
• Primary Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US09/610,237
• Time in Patent Office: 1,364 Days
• Field of Search: 118/712, 118/713, 118/723.I, 118/723.AN, 118/723.R, 118/723.E, 118/723.MW, 156/345.24, 156/345.25, 156/345.27, 156/345.28, 156/345.41, 156/345.43, 156/345.48
• US Class Current: 156/345.24
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means

Abstract

A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall which may comprise a window or radiation transmitting portion 130 that allows light to be transmitted therethrough. Residue deposits onto the window 130 during processing of the substrate 30 may be reduced. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.

Claims

1. A substrate processing chamber comprising:

(a) a support to support a substrate;

(b) a gas distributor;

(c) a gas energizer;

(d) a wall ceiling adapted to face the substrate, the ceiling comprising a radiation transmitting portion;

(e) a mask overlying the radiation transmitting portion and extending into a process zone of the process chamber, the mask having an aperture comprising an aspect ratio that is selected to reduce deposition of process residue on the radiation transmitting portion; and

(f) an exhaust,

whereby a substrate held on the support may be processed by process gas distributed by the gas distributor, energized by the gas energizer, and exhausted by the exhaust, and whereby radiation may be transmitted through the aperture of the mask and the radiation transmitting portion.

2. A substrate processing chamber according to claim 1 wherein the aperture has an aspect ratio that is sufficiently large to reduce access of process gas to the radiation transmitting portion.

3. A substrate processing chamber according to claim 1 wherein the aperture has an aspect ratio of from about 1:

1 to about 12;

1.

4. A substrate processing chamber according to claim 1 wherein the aperture has an aspect ratio that is sufficiently small to allow ions of the energized process gas to enter the aperture and etch away the process residue formed on a sidewall of the aperture and on the radiation transmitting portion.

5. A substrate processing chamber according to claim 1 wherein the aperture has an aspect ratio of from about 0.25:

1 to about 3;

1.

6. A substrate processing chamber according to claim 1 wherein the aperture has a diameter or width of from about 0.1 to about 50 mm, and a height of about 0.5 to about 500 mm.

7. A substrate processing chamber according to claim 1 wherein the mask comprises an array of hexagonal apertures.

8. A substrate processing chamber according to claim 1 wherein the mask comprises a material that is resistant to erosion by the process gas.

9. A substrate processing chamber according to claim 8 wherein the mask comprises one or more of Al₂O₃, SiO₂, AlN, BN, Si, SiC, Si₃N₄, TiO₂, or ZrO₂.

10. A substrate processing chamber according to claim 1 further comprising an electrical field source that is adapted to couple electrical energy to the wall to reduce deposition of the process residues on the wall.

11. A substrate processing chamber according to claim 1 further comprising a magnetic field source adapted to provide a magnetic flux across the wall to reduce deposition of process residues on the wall.

70. A substrate processing chamber according to claim 1 wherein the mask comprises an array of hexagonal apertures.

12. A substrate processing chamber comprising:

(a) a support having a receiving surface capable of supporting a substrate,

(b) a gas distributor capable of providing process gas in the chamber and a gas energizer that is capable of coupling energy to the process gas;

(c) a wall comprising a radiation transmitting portion that allows radiation to be transmitted therethrough to monitor processing of the substrate;

(d) a mask overlying the radiation transmitting portion and extending into a process zone of the chamber, the mask having an aperture comprising an aspect ratio that is selected to reduce deposition of process residue on the radiation transmitting portion, the aspect ratio being from about 0.25;

1 to about 3;

1; and

(e) an exhaust capable of exhausting process gas from the chamber.

13. A substrate processing chamber according to claim 12 further comprising an electrical field source that couples electrical energy to the radiation transmitting portion to further reduce deposition of process residues on the radiation transmitting portion.

14. A substrate processing chamber according to claim 12 further comprising a magnetic field source adapted to provide a magnetic flux across the radiation transmitting portion to further reduce the deposition of process residues on the radiation transmitting portion.

15. A substrate processing chamber comprising:

(a) a support to support a substrate;

(b) a gas distributor;

(c) a gas energizer;

(d) a ceiling adapted to face the substrate, the ceiling comprising a radiation transmitting portion having a mask extending into a process zone of the chamber, the mask having a plurality of apertures, the apertures having an aspect ratio that is selected to reduce deposition of process residues on the radiation transmitting portion; and

(e) an exhaust;

whereby a substrate held on the support may be processed by process gas distributed by the gas distributor, energized by the gas energizer, and exhausted by the exhaust, and whereby radiation may be transmitted through the apertures and the radiation transmitting portion.

16. A substrate processing chamber according to claim 15 wherein the apertures have aspect ratios that are sufficiently large to reduce access of process gas to the radiation transmitting portion.

17. A ceiling capable of being mounted on a process chamber facing a substrate, the ceiling comprising:

a radiation transmitting portion; and

an overlying mask adapted to extend into a process zone of the chamber, the overlying mask comprising a plurality of apertures having an aspect ratio that is selected to reduce deposition of process residues on the radiation transmitting portion,

whereby radiation may be transmitted through the radiation transmitting portion when a substrate is processed in the process chamber.

18. A ceiling according to claim 17 wherein the apertures have an aspect ratio that is sufficiently large to reduce access of process gas to the radiation transmitting portion.

19. A ceiling according to claim 17 wherein the mask apertures have an aspect ratio of from about 1:

1 to about 12;

1.

20. A ceiling according to claim 17 wherein the apertures have an aspect ratio that is sufficiently small to allow ions of an energized process gas to enter the apertures and etch away the process residues formed on a sidewall of the apertures and on the ceiling.

21. A ceiling according to claim 17 wherein the apertures have an aspect ratio of from about 0.25:

1 to about 3;

1.

22. A ceiling according to claim 17 wherein the apertures have a diameter or width of from about 0.1 to about 50 mm, and a height of about 0.5 to about 500 mm.

23. A ceiling according to claim 17 wherein the mask comprises a material that is resistant to erosion by a process gas.

24. A ceiling according to claim 17 wherein the mask comprises an array of hexagonal apertures.

25. A ceiling according to claim 17 wherein the mask comprises one or more of Al₂O₃, SiO₂, AlN, BN, Si, SiC, Si₃N₄, TiO₂, or ZrO₂.

26. A ceiling according to claim 17 wherein the radiation transmitting portion is absent a heating element for heating the radiation transmitting portion.

27. A ceiling according to claim 17 further comprising an electrical field source that is adapted to couple electrical energy to the radiation transmitting portion to reduce deposition of the process residues on the radiation transmitting portion.

28. A ceiling according to claim 17 further comprising a magnetic field source adapted to provide a magnetic flux across the radiation transmitting portion to reduce deposition of process residues on the radiation transmitting portion.

29. A substrate processing chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a wall comprising a radiation transmitting portion;

(e) a mask overlying the radiation transmitting portion, the mask having an aperture;

(f) an electrical field source that is adapted to couple electrical energy to the wall to reduce deposition of process residues on the wall; and

(g) an exhaust,

wherein a substrate held on the support may be processed by process gas distributed by the gas distributor, energized by the gas energizer, and exhausted by the exhaust, and whereby the mask is adapted to reduce deposition of process residue on the radiation transmitting portion and whereby radiation may be transmitted through the aperture of the mask and the radiation transmitting portion.

30. A substrate processing chamber according to claim 29 wherein the aperture has an aspect ratio that is sufficiently large to reduce access of process gas to the radiation transmitting portion.

31. A substrate processing chamber according to claim 29 wherein the aperture has an aspect ratio of from about 1:

1 to about 12;

1.

32. A substrate processing chamber according to claim 29 wherein the aperture has an aspect ratio that is sufficiently small to allow ions of the energized process gas to enter the aperture and etch away the process residue formed on a sidewall of the aperture and on the radiation transmitting portion.

33. A substrate processing chamber according to claim 29 wherein the aperture has an aspect ratio of from about 0.25:

1 to about 3;

1.

34. A substrate processing chamber according to claim 29 wherein the aperture has a diameter or width of from about 0.1 to about 50 mm, and a height of about 0.5 to about 500 mm.

35. A substrate processing chamber according to claim 29 wherein the mask comprises an array of hexagonal apertures.

36. A substrate processing chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a wall comprising a radiation transmitting portion;

(e) a mask overlying the radiation transmitting portion, the mask having an aperture;

(f) a magnetic field source adapted to provide a magnetic flux across the wall to reduce deposition of process residues on the wall; and

(g) an exhaust,

whereby a substrate held on the support may be processed by process gas distributed by the gas distributor, energized by the gas energizer, and exhausted by the exhaust, and whereby the mask is adapted to reduce deposition of process residue on the radiation transmitting portion and whereby radiation may be transmitted through the aperture of the mask and the radiation transmitting portion.

37. A substrate processing chamber according to claim 36 wherein the aperture has an aspect ratio that is sufficiently large to reduce access of process gas to the radiation transmitting portion.

38. A substrate processing chamber according to claim 36 wherein the aperture has an aspect ratio of from about 1:

1 to about 12;

1.

39. A substrate processing chamber according to claim 36 wherein the aperture has an aspect ratio that is sufficiently small to allow ions of the energized process gas to enter the aperture and etch away the process residue formed on a sidewall of the aperture and on the radiation transmitting portion.

40. A substrate processing chamber according to claim 36 wherein the aperture has an aspect ratio of from about 0.25:

1 to about 3;

1.

41. A substrate processing chamber according to claim 36 wherein the aperture has a diameter or width of from about 0.1 to about 50 mm, and a height of about 0.5 to about 500 mm.

42. A substrate processing chamber according to claim 36 wherein the mask comprises an array of hexagonal apertures.

43. A substrate processing chamber comprising:

(a) a support having a receiving surface capable of supporting a substrate;

(b) a gas distributor capable of providing process gas in the chamber and a gas energizer that is capable of coupling energy to the process gas;

(c) a radiation transmitting portion that allows radiation to be transmitted therethrough to monitor processing of the substrate;

(d) means extending into the interior of the chamber for reducing deposition of process residue from process gas on the radiation transmitting portion;

(e) an electrical field source that couples electrical energy to the radiation transmitting portion to further reduce deposition of process residues on the radiation transmitting portion; and

(f) an exhaust capable of exhausting process gas from the chamber.

44. A substrate processing chamber according to claim 43 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises means for controlling access of energized process gas species to the radiation transmitting portion.

45. A substrate processing chamber according to claim 43 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises a mask capable of masking the radiation transmitting portion from the energized process gas.

46. A substrate processing chamber according to claim 43 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises an overlying mask having apertures with an aspect ratio of from about 1:

1 to about 12;

1.

47. A substrate processing chamber according to claim 43 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises an overlying mask having apertures with an aspect ratio of from about 0.25:

1 to about 3;

1.

48. A substrate processing chamber comprising:

(a) a support having a receiving surface capable of supporting a substrate;

(b) a gas distributor capable of providing process gas in the chamber and a gas energizer that is capable of coupling energy to the process gas;

(c) a radiation transmitting portion that allows radiation to be transmitted therethrough to monitor processing of the substrate;

(d) means extending into the interior of the chamber for reducing deposition of process residue from process gas on the radiation transmitting portion;

(e) a magnetic field source adapted to provide a magnetic flux across the radiation transmitting portion to further reduce the deposition of process residues on the radiation transmitting portion; and

(f) an exhaust capable of exhausting process gas from the chamber.

49. A substrate processing chamber according to claim 48 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises means for controlling access of energized process gas species to the radiation transmitting portion.

50. A substrate processing chamber according to claim 48 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises a mask capable of masking the radiation transmitting portion from the energized process gas.

51. A substrate processing chamber according to claim 48 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises an overlying mask having apertures with an aspect ratio of from about 1:

1 to about 12;

1.

52. A substrate processing chamber according to claim 48 wherein the means for reducing deposition of process residue on the radiation transmitting portion comprises an overlying mask having apertures with an aspect ratio of from about 0.25:

1 to about 3;

1.

53. A window capable of being mounted on a process chamber, the window comprising:

a radiation transmitting portion;

an overlying mask with an aperture; and

an electrical field source that is adapted to couple electrical energy to the radiation transmitting portion to reduce deposition of the process residues on the radiation transmitting portion,

whereby the mask is adapted to reduce deposition of process residue on the window and whereby radiation may be transmitted through the window when a substrate is processed in the process chamber.

54. A window according to claim 53 wherein the aperture has an aspect ratio that is sufficiently large to reduce access of process gas to the radiation transmitting portion.

55. A window according to claim 53 wherein the mask aperture has an aspect ratio of from about 1:

1 to about 12;

1.

56. A window according to claim 53 wherein the aperture has an aspect ratio that is sufficiently small to allow ions of an energized process gas to enter the aperture and etch away the process residues formed on a sidewall of the aperture and on window.

57. A window according to claim 53 wherein the aperture has an aspect ratio of from about 0.25:

1 to about 3;

1.

58. A window according to claim 53 wherein the aperture has a diameter or width of from about 0.1 to about 50 mm, and a height of about 0.5 to about 500 mm.

59. A window according to claim 53 wherein the mask comprises a plurality of apertures.

60. A window according to claim 59 wherein the mask comprises an array of hexagonal apertures.

61. A window capable of being mounted on a process chamber, the window comprising:

a radiation transmitting portion;

an overlying mask with an aperture; and

a magnetic field source adapted to provide a magnetic flux across the radiation transmitting portion to reduce deposition of process residues on the radiation transmitting portion;

whereby the mask is adapted to reduce deposition of process residue on the window and whereby radiation may be transmitted through the window when a substrate is processed in the process chamber.

62. A window according to claim 61 wherein the aperture has an aspect ratio that is sufficiently large to reduce access of process gas to the radiation transmitting portion.

63. A window according to claim 61 wherein the mask aperture has an aspect ratio of from about 1:

1 to about 12;

1.

64. A window according to claim 61 wherein the aperture has an aspect ratio that is sufficiently small to allow ions of an energized process gas to enter the aperture and etch away the process residues formed on a sidewall of the aperture and on window.

65. A window according to claim 61 wherein the aperture has an aspect ratio of from about 0.25:

1 to about 3;

1.

66. A window according to claim 61 wherein the aperture has a diameter or width of from about 0.1 to about 50 mm, and a height of about 0.5 to about 500 mm.

67. A window according to claim 61 wherein the mask comprises a plurality of apertures.

68. A window according to claim 67 wherein the mask comprises an array of hexagonal apertures.

69. A substrate processing chamber comprising:

(a) a support having a receiving surface capable of supporting a substrate;

(b) a gas distributor capable of providing process gas in the chamber and a gas energizer that is capable of coupling energy to the process gas;

(c) a wall comprising a radiation transmitting portion that allows radiation to be transmitted therethrough to monitor processing of the substrate;

(d) a mask overlying the radiation transmitting portion and extending into a process zone of the chamber, the mask having an aperture comprising an aspect ratio that is sufficiently small to allow ions of the energized gas to enter the aperture and etch away the process residues formed on a sidewall of the aperture and the radiation transmitting portion to reduce deposition of process residue on the radiation transmitting portion, the aspect ratio being from about 0.25;

1 to about 3;

1; and

(e) an exhaust capable of exhausting process gas from the chamber.