Group III nitride compound semiconductor device and method of producing the same

• US 6,713,789 B1
• Filed: 03/01/2000
• Issued: 03/30/2004
• Est. Priority Date: 03/31/1999
• Status: Expired due to Term

• Current Assignee: Toyo Gosei Co., Ltd
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Shibata, Naoki, Ito, Jun, Watanabe, Hiroshi, Senda, Masanobu, Chiyo, Toshiaki, Asami, Shizuyo, Asami, Shinya
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US09/516,177
• Time in Patent Office: 1,490 Days
• Field of Search: 257/13, 257/82, 257/85, 257/103
• US Class Current: 257/103
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

Claims

1. A group III nitride compound semiconductor device, comprising:

a substrate;

a first group III nitride compound layer having a thickness of from 50 Å

to 3000 Å and

being formed on said substrate by a method not using metal organic compounds as raw materials; and

a second group III nitride compound semiconductor layer being formed on said first group III nitride compound layer,

wherein said substrate is at a temperature not less than 400°

C. when said first group III nitride compound semiconductor layer is formed thereon, and

wherein said first group III nitride compound semiconductor layer is subjected to a heat treatment in a range of 1050°

C. to 1200°

C. before said second group III nitride compound semiconductor layer is formed thereon.

2. A device according to claim 1, wherein said substrate comprises a sapphire substrate.

3. A device according to claim 2, wherein said first group III nitride compound semiconductor layer is formed on a face a of said sapphire substrate.

4. A device according to claim 1, wherein said method not using metal organic compounds as raw materials is selected from the group consisting of:

a sputtering method, an evaporation method, an ion plating method, a laser ablation method, and an electron cyclotron resonance (ECR) method.

5. A device according to claim 1, wherein said first group III nitride compound semiconductor layer comprises Al_XGa₁₋

XN (0≦

X≦

1).

6. A device according to claim 1, wherein said first group III nitride compound semiconductor layer comprises AlN.

7. A device according to claim 1, wherein the thickness of said first group III nitride compound semiconductor layer is not smaller than 100 Å

but smaller than 1000 Å

.

8. A device according to claim 1, wherein said first group III nitride compound semiconductor layer is formed on said substrate heated to a temperature of 430°

C.

9. A device according to claim 1, wherein said first group III nitride compound semiconductor layer is heated in an atmosphere of a mixture gas comprising ammonia gas and at least one of hydrogen gas and nitrogen gas.

16. A device according to claim 1, wherein said first group III nitride compound semiconductor layer said second group III nitride compound semiconductor layer comprises a device layer.

17. A device according to claim 1, wherein said first group III nitride compound semiconductor layer comprises a polycrystalline group III nitride compound semiconductor layer.

18. A device according to claim 1, wherein said first group III nitride compound semiconductor layer is formed by a method other than molecular beam epitaxy (MBE).

19. A device according to claim 1, wherein said first group III nitride compound semiconductor layer is formed by at least one of sputtering, evaporation, ion plating, and laser ablation.

20. A device according to claim 1, wherein a crystallinity of said second group III nitride compound semiconductor layer is based on a thickness of said first group III nitride compound semiconductor layer.

21. A device according to claim 1, wherein said second group III nitride compound semiconductor layer comprises a group III nitride compound which is different from a group III nitride compound in said first group III nitride compound semiconductor layer.

23. A device according to claim 1, wherein the first group III nitride compound semiconductor layer is formed in an atmosphere of a mixture gas comprising ammonia gas and at least one of hydrogen gas and nitrogen gas, the mixture ratio of the hydrogen gas or the nitrogen gas to ammonia gas being set to be in a range of from 1:

1 to 1;

0.1 in terms of flow rate ratio.

24. A device according to claim 1, wherein said method not using metal organic compounds as raw materials comprises a DC magnetron sputtering method.

25. A device according to claim 1, wherein said substrate comprises a sapphire substrate and the first group III nitride compound semiconductor layer is formed on a face a of the sapphire substrate.

10. A group III nitride compound semiconductor device, comprising:

a substrate;

a first group III nitride compound semiconductor layer having a thickness of from 50 Å

to 3000 Å and

being formed on said substrate by a method not using metal organic compounds as raw materials; and

a second group III nitride compound semiconductor layer being formed on said first group III nitride compound layer,

wherein said second group III nitride compound semiconductor layer is formed by a metal organic chemical vapor deposition method, and

wherein said first group III nitride compound semiconductor layer is subjected to a heat treatment in a range of 1050°

C. to 1200°

C. before said second group III nitride compound semiconductor layer is formed thereon.

26. A device according to claim 10, wherein the first group III nitride compound semiconductor layer is formed in an atmosphere of a mixture gas comprising ammonia gas and at least one of hydrogen gas and nitrogen gas, the mixture ratio of the hydrogen gas or the nitrogen gas to the ammonia gas being set to be in a range of from 1:

1 to 1;

0.1 in terms of flow rate ratio.

27. A device according to claim 10, wherein said method not using metal organic compounds as raw materials comprises a DC magnetron sputtering method.

28. A device according to claim 10, wherein said substrate comprises a sapphire substrate and the first group III nitride compound semiconductor layer is formed on a face a of the sapphire substrate.

11. A group III nitride compound semiconductor device, comprising:

a sapphire substrate;

a first group III nitride compound semiconductor layer having a thickness of from 50 Å

to 3000 Å and

being formed on said sapphire substrate by a sputtering method; and

a second group III nitride compound semiconductor layer formed on said first group III nitride compound semiconductor layer by a metal organic chemical vapor deposition method,

wherein said first group III nitride compound semiconductor layer is subjected to a heat treatment in a range of 1050°

C. to 1200°

C. before said second group III nitride compound semiconductor layer is formed thereon.

12. A device according to claim 11, wherein said first group III nitride compound layer comprises AlN.

13. A device according to claim 11, wherein the thickness of said first group III nitride compound layer is not smaller than 100 Å

but smaller than 1000 Å

.

14. A device according to claim 11, wherein a carrier gas of hydrogen or nitrogen is used in said metal organic chemical vapor deposition method for forming said second group III nitride compound semiconductor layer.

29. A device according to claim 11, wherein the first group III nitride compound semiconductor layer is formed in an atmosphere of a mixture gas comprising ammonia gas and at least one of hydrogen gas and nitrogen gas, the mixture ratio of the hydrogen gas or the nitrogen gas to the ammonia gas being set to be in a range of from 1:

1 to 1;

0.1 in terms of flow rate ratio.

30. A device according to claim 11, wherein said method not using metal organic compounds as raw materials comprises a DC magnetron sputtering method.

31. A device according to claim 11, wherein the first group III nitride compound semiconductor layer is formed on a face a of the sapphire substrate.

15. A group III nitride compound semiconductor device, comprising:

a buffer layer comprising a first group III nitride compound semiconductor layer; and

a second group III nitride compound semiconductor layer formed on said buffer layer;

wherein said buffer layer is formed on a substrate having a temperature not less than 400°

C. by a method not using metal organic compounds as raw materials and is heated in an atmosphere of a mixture of gases containing hydrogen or nitrogen gas and ammonia gas before formation of said second group III nitride compound semiconductor layer, and

wherein said first group III nitride compound semiconductor layer is subjected to a heat treatment in a range of 1050°

C. to 1200°

C. before said second group III nitride compound semiconductor layer is formed thereon.

32. A device according to claim 15, wherein the first group III nitride compound semiconductor layer is formed in an atmosphere of a mixture gas comprising ammonia gas and at least one of hydrogen gas and nitrogen gas, the mixture ratio of the hydrogen gas or the nitrogen gas to the ammonia gas being set to be in a range of from 1:

1 to 1;

01 in terms of flow rate ratio.

33. A device according to claim 15, wherein said method not using metal organic compounds as raw materials comprises a DC magnetron sputtering method.

34. A device according to claim 15, wherein said substrate comprises a sapphire substrate and the first group III nitride compound semiconductor layer is formed on a face a of the sapphire substrate.

22. A group III nitride compound semiconductor device, comprising:

a first layer comprising a group III nitride compound semiconductor having a thickness of from 50Å

to 3000Å and

formed on a substrate having a temperature not less than 400°

C.; and

a second layer comprising a group III nitride compound semiconductor formed on said first layer, and having a crystallinity characterized b an x-ray rocking curve having a full width at half maximum (FWHM) of less than about 25 seconds,

wherein said first layer is subjected to a heat treatment in a range of 1050°

C. to 1200°

C. before said second layer is formed thereon.

35. A device according to claim 22, wherein the first layer is formed in an atmosphere of a mixture gas comprising ammonia gas and at least one of hydrogen gas and nitrogen gas, the mixture ratio of the hydrogen gas or the nitrogen gas to the ammonia gas being set to be in a range of from 1:

1 to 1;

0.1 in terms of flow rate ratio.

36. A device according to claim 22, wherein said first layer is formed on said substrate by a DC magnetron sputtering method.

37. A device according to claim 22, wherein said substrate comprises a sapphire substrate and the first group III nitride compound semiconductor layer is formed on a face a of the sapphire substrate.