Method for manufacturing a multi-level interconnect structure

• US 6,713,835 B1
• Filed: 05/22/2003
• Issued: 03/30/2004
• Est. Priority Date: 05/22/2003
• Status: Expired due to Fees

• Current Assignee: Google LLC (Alphabet Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Mitchell, Peter H., Koburger, Charles William III, Horak, David Vaclav, Nesbit, Larry Alan
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US10/443,709
• Time in Patent Office: 313 Days
• Field of Search: 438/618, 438/619, 438/622, 438/687, 438/745, 257/522, 257/758
• US Class Current: 257/522
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for forming interlevel dielectric layers in multilevel interconnect structures using air as the constituent low-k dielectric material that is compatible with damascene processes without introducing additional process steps. The conductive features characteristic of the damascene process are formed by standard lithographic and etch processes in the mandrel material for each level of the interconnect structure. The conductive features in each level are surrounded by the mandrel material. After all levels of the interconnect structure are formed, a passageway is provided to the mandrel material. An isotropic etchant is introduced through the passageway that selectively etches and removes the mandrel material. The spaces formerly occupied by the mandrel material in the levels of the interconnect structure are filled by air, which operates as a low-k dielectric material.

Claims

1. A method for manufacturing a multi-level interconnect structure, comprising:

applying a mandrel material to a substrate;

removing portions of the mandrel material to form trenches;

removing portions of the mandrel material to form vias, the trenches opening onto the underlying vias;

filling the vias and the trenches with a conductive material to create a plurality of features having the mandrel material disposed between adjacent features;

forming at least one layer overlying the features and the mandrel material;

defining at least one passageway leading to the mandrel material through the layer; and

removing the mandrel material by introducing an isotropic etchant into the passageway, the isotropic etchant selectively etching the mandrel material to leave an air void between adjacent features.

2. The method of claim 1 wherein the mandrel material is selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium.

3. The method of claim 2 wherein the mandrel material is amorphous silicon and the isotropic etchant contains potassium hydroxide.

4. The method of claim 2 wherein the mandrel material is amorphous germanium and the isotropic etchant contains hydrogen peroxide.

5. The method of claim 1 wherein removing portions of the mandrel material to form trenches is performed by a single lithographic and etch operation.

6. The method of claim 1 wherein removing portions of the mandrel material to form vias is performed by a single lithographic and etch operation.

7. The method of claim 1 wherein the multilevel interconnect structure is free of protective layers covering the mandrel material.

8. The method of claim 1 wherein the conductive material is copper.

9. The method of claim 8 wherein the isotropic etchant is capable of removing the mandrel material selective to copper.

10. The method of claim 9 wherein the isotropic etchant is capable of removing the mandrel material selective to titanium, titanium nitride, tantalum, tantalum nitride, silicon oxide, silicon nitride, and aluminum.

11. The method of claim 1 wherein filling the vias and the trenches with the conductive material further comprises introducing the conductive material into the vias and the trenches by a single deposition of the conductive material.

12. A method for manufacturing a multi-level interconnect structure, comprising:

forming a first layer of a mandrel material on a substrate;

removing portions of the first layer of the mandrel material to form first trenches;

removing portions of the first layer of the mandrel material to form first vias, the first trenches opening onto the underlying first vias;

filling the first vias and the first trenches with a conductive material to create a plurality of first features having the mandrel material horizontally separating adjacent first features;

forming a second layer of the mandrel material overlying the first features;

removing portions of the second layer of the mandrel material to form second trenches;

removing portions of the second layer of the mandrel material to form second vias, the second trenches opening onto the underlying second vias;

filling the second vias and the second trenches with the conductive material to create a plurality of second features having the mandrel material horizontally separating adjacent second features, the mandrel material separating the second features being coextensive with the mandrel material separating the first features;

forming at least one layer overlying the second features;

defining at least one passageway leading to the mandrel material through the layer; and

removing the mandrel material by introducing an isotropic etchant into the passageway, the isotropic etchant selectively etching the mandrel material to leave an air void between adjacent first features and between adjacent second features.

13. The method of claim 12 wherein the mandrel material is selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium.

14. The method of claim 12 wherein the mandrel material is amorphous silicon and the isotropic etchant contains potassium hydroxide.

15. The method of claim 12 wherein the mandrel material is amorphous germanium and the isotropic etchant contains hydrogen peroxide.

16. The method of claim 12 wherein removing the mandrel material to form first trenches is performed by a single lithographic and etch operation.

17. The method of claim 12 wherein removing the mandrel material to form first vias is performed by a single lithographic and etch operation.

18. The method of claim 12 wherein removing the mandrel material to form second trenches is performed by a single lithographic and etch operation.

19. The method of claim 12 wherein removing the mandrel material to form second vias is performed by a single lithographic and etch operation.

20. The method of claim 12 wherein an interface between the mandrel material separating the second features and the mandrel material separating the first features is free of protective layers.

21. The method of claim 12 wherein the conductive material is copper.

22. The method of claim 21 wherein the isotropic etchant is capable of removing the mandrel material selective to copper.

23. The method of claim 22 wherein the isotropic etchant is capable of removing the mandrel material selective to titanium, titanium nitride, tantalum, tantalum nitride, silicon oxide, silicon nitride, and aluminum.

24. A method for manufacturing a multi-level interconnect structure, comprising:

applying a mandrel material to a substrate, the mandrel material being selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium;

removing portions of the mandrel material to form trenches;

removing portions of the mandrel material to form vias, the trenches opening onto the underlying vias;

filling the vias and the trenches simultaneously with a conductive material to create a plurality of features having the mandrel material disposed between adjacent features;

forming at least one layer overlying the features and the mandrel material;

defining at least one passageway leading to the mandrel material through the layer; and

removing the mandrel material by introducing an isotropic etchant into the passageway, the isotropic etchant selectively etching the mandrel material to leave an air void between adjacent features.

25. The method of claim 24 wherein the mandrel material is amorphous silicon and the isotropic etchant contains potassium hydroxide.

26. The method of claim 24 wherein the mandrel material is amorphous germanium and the isotropic etchant contains hydrogen peroxide.

27. The method of claim 24 wherein removing portions of the mandrel material to form trenches is performed by a single lithographic and etch operation.

28. The method of claim 24 wherein removing portions of the mandrel material to form vias is performed by a single lithographic and etch operation.

29. The method of claim 24 wherein the multilevel interconnect structure is free of protective layers covering the mandrel material.

30. The method of claim 24 wherein the conductive material is copper.

31. The method of claim 30 wherein the isotropic etchant is capable of removing the mandrel material selective to copper.

32. The method of claim 31 wherein the isotropic etchant is capable of removing the mandrel material selective to titanium, titanium nitride, tantalum, tantalum nitride, silicon oxide, silicon nitride, and aluminum.

33. A multi-level interconnect structure produced by the process comprising:

applying a mandrel material to a substrate;

removing portions of the mandrel material to form trenches;

removing portions of the mandrel material to form vias, the trenches opening onto the underlying vias;

filling the vias and the trenches with a conductive material to create a plurality of features having the mandrel material disposed between adjacent features;

forming at least one layer overlying the features and the mandrel material;

defining at least one passageway leading to the mandrel material through the layer; and

removing the mandrel material by introducing an isotropic etchant into the passageway, the isotropic etchant selectively etching the mandrel material to leave an air void between adjacent features.

34. The multi-level interconnect structure of claim 33 wherein the conductive material is copper.

35. The multi-level interconnect structure of claim 34 wherein the isotropic etchant is capable of removing the mandrel material selective to copper.

36. The multi-level interconnect structure of claim 35 wherein the isotropic etchant is capable of removing the mandrel material selective to titanium, titanium nitride, tantalum, tantalum nitride, silicon oxide, silicon nitride, and aluminum.

37. The multi-level interconnect structure of claim 33 wherein the mandrel material is selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium.

38. The multi-level interconnect structure of claim 37 wherein the mandrel material is selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium.

39. The multi-level interconnect structure of claim 37 wherein the mandrel material is amorphous silicon and the isotropic etchant contains potassium hydroxide.