Semiconductor device including power supply circuit conducting charge pumping operation
First Claim
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1. A semiconductor device, comprising:
- a power supply circuit generating an internal power supply voltage by a charge pumping operation, said power supply circuit including an oscillator generating a clock having a substantially constant period, a pump capacitor having an oxide film, said pump capacitor being formed between a first node and a second node, a clamping unit clamping said second node to a first voltage in a burn-in test, and a pump capacitor input control unit provided between said oscillator and said first node, said pump capacitor input control unit being configured to apply a prescribed voltage between said first node and said second node during said burn-in test by fixing a voltage of said first node.
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Abstract
The boosting circuit provided in a semiconductor device includes a ring oscillator generating a pump clock having constant periods, a pump capacitor for performing a boost operation, and a pump capacitor input control unit provided between one electrode of the pump capacitor and the ring oscillator. The pump capacitor input control unit fixes one electrode of the pump capacitor to a prescribed voltage to apply stress of a desired level to the pump capacitor in response to a control signal that is activated at the time of burn-in test.
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Citations
10 Claims
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1. A semiconductor device, comprising:
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a power supply circuit generating an internal power supply voltage by a charge pumping operation, said power supply circuit including an oscillator generating a clock having a substantially constant period, a pump capacitor having an oxide film, said pump capacitor being formed between a first node and a second node, a clamping unit clamping said second node to a first voltage in a burn-in test, and a pump capacitor input control unit provided between said oscillator and said first node, said pump capacitor input control unit being configured to apply a prescribed voltage between said first node and said second node during said burn-in test by fixing a voltage of said first node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
said select switch has a metal interconnection selectively formed between one of a first internal node that is set to a fourth voltage in said burn-in test and a second internal node that is set to a fifth voltage and a third internal node, and said pump capacitor input control unit selects the voltage setting of said first node in response to a voltage of said third internal node in said burn-in test. -
10. The semiconductor device according to claim 1, wherein said prescribed voltage corresponds to a power supply voltage that is set higher in said burn-in test than in a normal operation.
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Specification