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Ferroelectric transistor for storing two data bits

  • US 6,714,435 B1
  • Filed: 09/19/2002
  • Issued: 03/30/2004
  • Est. Priority Date: 09/19/2002
  • Status: Expired due to Fees
First Claim
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1. A method for the non-volatile storage of two data bits in a single FET transistor comprising:

  • providing a field effect transistor (FET) having gate, drain, source, and substrate terminals, and having a first ferroelectric region between the gate and the source and second ferroelectric region between the gate and the drain;

    applying a positive voltage greater than a coercive voltage between the gate and the source to polarize said first ferroelectric region to a first state;

    applying a negative voltage greater than the coercive voltage between the gate and source to polarize said first ferroelectric region to a second state;

    applying a positive voltage greater than the coercive voltage between the gate and the drain to polarize said second ferroelectric region to the first state;

    applying a negative voltage greater than the coercive voltage between the gate and the drain to polarize said second ferroelectric region to the second state;

    applying a positive voltage less than the coercive voltage on the gate, ground potential on the source, and a positive voltage no greater than the gate voltage on the drain to detect the polarization state of said first ferroelectric region, a high current between source and drain indicating the first state and a low current between source and drain indicating the second state; and

    applying a positive voltage less than the coercive voltage on the gate, ground potential on the drain, and a positive voltage no greater than the gate voltage on the source to detect the polarization state of said second ferroelectric region, a high current between source and drain indicating the first state and a low current between source and drain indicating the second state.

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