Dielectric etch chamber with expanded process window

• US 6,716,302 B2
• Filed: 09/24/2002
• Issued: 04/06/2004
• Est. Priority Date: 11/01/2000
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Bjorkman, Claes, Salimian, Siamak, Shan, Hongching, Luscher, Paul E, Welch, Michael D, Pu, Bryan Y, Lee, Evans Y, Carducci, James D, Noorbakhsh, Hamid
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US10/253,496
• Publication Number:
  US 20030037880A1
• Time in Patent Office: 560 Days
• Field of Search: 118/723.E, 118/715, 118/723.MR, 118/723.I, 118/723.MA, 136/345.47, 136/345.29, 136/345.33, 136/345.34, 136/345.49, 438/710, 216/67
• US Class Current: 156/345.47
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/6875 characterised by a plurality of individual support members, e.g. support posts or protrusions
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/68792 characterised by the construction of the shaft
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Claims

1. A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures, comprising:

(a) a chamber body defining a processing volume;

(b) a lid provided upon said chamber body, said lid comprising a first electrode;

(c) a substrate support provided in said processing volume and comprising a second electrode;

(d) a radio frequency source coupled at least to one of said first and second electrodes for capacitively coupling RF plasma source power into said chamber;

(e) a process gas inlet configured to deliver process gas comprising hexafluoro-1, 3-Butadiene gas into said processing volume;

(f) a process gas outlet; and

,

(g) an evacuation pump system including a pump having pumping capacity of at least 1600 liters/second, and a controller connected to said pump, said evacuation pump system being configured to continuously exhaust said processing volume at a rate of at least 48 processing volumes per second whereby to limit a residency in said processing volume of said process gas to less than 70 milliseconds so as to enhance etch selectivity.

2. The reactor according to claim 1, wherein said gas inlet comprises a plurality of nozzles.

3. The reactor according to claim 1, further comprising a plasma confinement magnet arrangement.

4. The reactor according to claim 1, further comprising a thermally controlled liner disposed within said processing volume.

5. The reactor according to claim 1, wherein said radio frequency source is connected across said first and second electrodes.

6. The reactor of claim 1 wherein said radio frequency source comprises an RF power generator and an impedance match device connected between said RF power generator and at least one of said first and second electrodes.

7. A plasma reactor, comprising:

(a) a chamber body defining a processing volume;

(b) a lid provided upon said chamber body, said lid comprising a first electrode;

(c) a substrate support provided in said processing volume and comprising a second electrode, said substrate defining a pumping annulus between said chamber body and said substrate support;

(d) a radio frequency source coupled at least to one of said first and second electrodes for capacitively coupling RF plasma source power into said chamber;

(e) a process gas inlet configured to deliver process gas comprising hexafluoro-1, 3-Butadiene gas into said processing volume;

(f) an evacuation pump system including a pump having pumping capacity of at least 1600 liters/second and coupled said pumping annulus, and a controller connected to said pump, said evacuation pump system being configured to continuously exhaust said processing volume at a rate of at least 48 processing volumes per second whereby to limit a residency in said processing volume of said process gas to less than 70 milliseconds so as to enhance etch selectivity.

8. The reactor according to claim 7, wherein said gas inlet comprises a plurality of nozzles.

9. The reactor according to claim 7, further comprising a plasma confinement magnet arrangement.

10. The reactor according to claim 7, further comprising a thermally controlled liner disposed within said processing volume.

11. The reactor according to claim 7, wherein said radio frequency source is connected across said first and second electrodes.

12. The reactor of claim 7 wherein said radio frequency source comprises an RF power generator and an impedance match device connected between said RF power generator and at least one of said first and second electrodes.

13. A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures, comprising:

(a) a chamber body defining a processing volume;

(b) a lid provided upon said chamber body, said lid comprising a first electrode;

(c) a substrate support provided in said processing volume and comprising a second electrode;

(d) a radio frequency source coupled at least to one of said first and second electrodes for capacitively coupling RF plasma source power into said chamber;

(e) a process gas inlet configured to deliver process gas comprising hexafluoro-1, 3-Butadiene gas into said processing volume;

(f) a process gas outlet; and

,

(g) an evacuation pump system configured to continuously exhaust said processing volume at a pumping rate that is sufficient to limit residency time of said process gas in said processing volume to no greater than 70 ms so as to enhance etch selectivity.

14. The reactor according to claim 13, wherein said pumping rate is sufficient to limit said residency time to no greater than 50 ms.

15. The reactor according to claim 13, wherein and said pumping rate is at least about 1600 liters/second.

16. The reactor according to claim 13, further comprising a thermally controlled liner disposed within said processing volume.

17. The reactor according to claim 13, wherein said radio frequency source is connected across said first and second electrodes.

18. The reactor of claim 13 wherein said radio frequency source comprises an RF power generator and an impedance match device connected between said RF power generator and at least one of said first and second electrodes.