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Method for filling depressions on a semiconductor wafer

  • US 6,716,720 B2
  • Filed: 03/03/2003
  • Issued: 04/06/2004
  • Est. Priority Date: 03/02/2002
  • Status: Expired due to Term
First Claim
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1. A method for filling a depression between two vertically adjoining semiconductor layers, the method which comprises:

  • forming two vertically adjoining semiconductor layers on a semiconductor wafer, the two semiconductor layers being made of different materials and an edge depression forming near a transition between the two semiconductor layers;

    in a large-area manner, applying an essentially uniform covering layer having a predetermined layer thickness above the two semiconductor layers to cover the two semiconductor layers and the edge depression lying between the two semiconductor layers;

    increasing a rate at which the covering layer can be subsequently removed by introducing a doping material into the covering layer essentially down to a depth corresponding to the layer thickness of the covering layer; and

    removing the covering layer with the doping material such that undoped covering layer material remains in the edge depression.

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