Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
First Claim
1. A method for providing a body contact for a field effect transistor, wherein said field effect transistor is disposed on a dielectric layer situated on top of a substrate, wherein said field effect transistor includes a body region formed on a first surface portion of said dielectric layer, a source region formed on a second surface portion of said dielectric layer contiguous with said first surface portion, a drain region formed on a third surface portion of said dielectric layer contiguous with said first surface portion, a gate layer overlying said body region and being operative to induce a channel in that portion of said body region disposed between and adjoining said source region and said drain region, said method comprising:
- forming a plurality of diffusion regions extending from a first edge of said source region to a second edge of said source region of said field effect transistor, wherein said first edge of said source region is adjacent to said gate layer and said second edge of said source region is opposite to said first edge of said source region;
forming a plurality of extended portions of said gate layer extending from said first edge of said source region to overlap a portion of a respective one of said plurality of diffusion regions; and
ohmically connecting said plurality of diffusion regions to said body region of said field effect transistor said plurality of diffusion regions functioning as a body contact.
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Accused Products
Abstract
A radiation hardened silicon-on-insulator transistor is disclosed. A dielectric layer is disposed on a substrate, and a transistor structure is disposed on the dielectric layer. The transistor structure includes a body region, a source region, a drain region, and a gate layer. The body region is formed on a first surface portion of the dielectric layer, the source region is formed on a second surface portion of the dielectric layer contiguous with the first surface portion, the drain region is formed on a third surface portion of the dielectric layer contiguous with the first surface portion, and the gate layer overlies the body region and being operative to induce a channel in that portion of the body region disposed between and adjoining the source region and the drain region. In addition, multiple diffusions are placed across two edges of the source region. These diffusions are ohmically connected to the body region via a body contact, and these diffusions are also connected to the source region by a self-aligned salicide.
14 Citations
5 Claims
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1. A method for providing a body contact for a field effect transistor, wherein said field effect transistor is disposed on a dielectric layer situated on top of a substrate, wherein said field effect transistor includes a body region formed on a first surface portion of said dielectric layer, a source region formed on a second surface portion of said dielectric layer contiguous with said first surface portion, a drain region formed on a third surface portion of said dielectric layer contiguous with said first surface portion, a gate layer overlying said body region and being operative to induce a channel in that portion of said body region disposed between and adjoining said source region and said drain region, said method comprising:
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forming a plurality of diffusion regions extending from a first edge of said source region to a second edge of said source region of said field effect transistor, wherein said first edge of said source region is adjacent to said gate layer and said second edge of said source region is opposite to said first edge of said source region;
forming a plurality of extended portions of said gate layer extending from said first edge of said source region to overlap a portion of a respective one of said plurality of diffusion regions; and
ohmically connecting said plurality of diffusion regions to said body region of said field effect transistor said plurality of diffusion regions functioning as a body contact. - View Dependent Claims (2, 3, 4, 5)
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Specification