Memory structures
First Claim
Patent Images
1. A memory structure comprising:
- a first electrode;
a second electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode;
a memory storage element disposed between the thermal conduction limiting electrode and the second electrode; and
a control element disposed between the second electrode and the first electrode.
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Abstract
A memory structure that includes a first electrode, a second electrode, a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode, a memory storage elementdisposed between the thermal conduction limiting electrode and the second electrode, and a control element disposed between the second electrode and the first electrode.
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Citations
47 Claims
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1. A memory structure comprising:
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a first electrode;
a second electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode;
a memory storage element disposed between the thermal conduction limiting electrode and the second electrode; and
a control element disposed between the second electrode and the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A memory structure comprising:
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a first electrode;
a second electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode;
a tunnel junction memory storage element disposed between the thermal conduction limiting electrode and the second electrode; and
a tunnel junction control element disposed between the second electrode and the first electrode. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A memory structure comprising:
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a first electrode;
a second electrode;
means for electrically conducting and limiting thermal conduction;
a memory storage element disposed between said means for electrically conducting and the second electrode; and
a control element disposed between the second electrode and the first electrode.
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41. A memory structure comprising:
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a first electrode;
a thermal conduction limiting electrode; and
a memory storage element and a control element serially connected between the first electrode and the thermal conduction limiting electrode;
wherein the memory storage element is electrically connected to the control element by a second electrode.
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42. A memory structure comprising:
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a first electrode;
a second electrode;
a memory storage element electrically connected to the first electrode and the second electrode;
a control element electrically connected to the memory storage element by the second electrode; and
a thermal conduction limiting electrode electrically connected to the control element;
wherein the first electrode, the memory storage element, the second electrode, the control element and the thermal conduction limiting electrode are serially connected and wherein the second electrode is between the first electrode and the thermal conduction limiting electrode. - View Dependent Claims (43, 44, 45)
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46. A memory structure comprising:
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a first electrode;
a second electrode serially connected to the first electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode, the thermal conduction limiting electrode being serially connected with the first electrode and the second electrode, the second electrode being disposed between the first electrode and the thermal conduction limiting electrode;
a control element disposed between the first electrode and the second electrode; and
a memory storage element disposed between the second electrode and the thermal conduction limiting electrode.
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47. A cross-point memory array comprising:
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a plurality of row selection conductor lines;
a plurality of column selection conductor lines; and
a memory storage element electrically connected to a control element by an electrode, the memory storage element and the control element being serially connected between a thermal conduction limiting electrode and one of a first row selection conductor line or column selection conductor line.
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Specification