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Lateral device with improved conductivity and blocking control

  • US 6,717,230 B2
  • Filed: 08/27/2002
  • Issued: 04/06/2004
  • Est. Priority Date: 10/17/2001
  • Status: Expired due to Fees
First Claim
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1. A lateral transistor device comprising:

  • a lightly doped layer of semiconductor material having first and second more heavily doped regions of a first conductivity type formed along a surface thereof;

    a third region of a second conductivity type between the first and second regions;

    a lightly doped region of the first conductivity type between the second and third regions;

    a control electrode positioned to enable conduction through the third region; and

    a biasing electrode structure positioned along the third region to alter the electric field in the third region.

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